Thermal stability of high-k Er-silicate gate dielectric formed by interfacial reaction between Er and SiO2 films

被引:4
作者
Chang, Sung-Yong [2 ]
Jeong, Myeong-Il [1 ]
Chandra, S. V. Jagadeesh [1 ]
Lee, Yong-Boo [3 ]
Hong, Hyo-Bong [4 ]
Reddy, V. Rajagopal [5 ]
Choi, Chel-Jong [1 ]
机构
[1] Chonbuk Natl Univ, Semicond Phys Res Ctr, Sch Semicond & Chem Engn, Jeonju 561756, South Korea
[2] Korea Elect Power Res Inst, Power Integr Grp, Taejon 305380, South Korea
[3] Korea Basic Sci Inst, Jeonju Ctr, Jeonju 561756, South Korea
[4] Elect & Telecommun Res Inst, Future Technol Res Grp, Taejon 305700, South Korea
[5] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India
关键词
Er-silicate; Interfacial reaction; High-k; EOT; Interface trap density;
D O I
10.1016/j.mssp.2009.06.001
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We fabricated a high-k Er-silicate gate dielectric using interfacial reaction between Er and SiO2 films and investigated its thermal stability. The reduced capacitance with increasing annealing temperature is associated with the chemical bonding change of Er-silicate from Er-rich to Si-rich, induced by a reaction between Er-silicate and Si during thermal treatment. Further an increase in the annealing temperature (> 500 degrees C) causes the formation of Si dangling bonds, which is responsible for an increased interface trap density. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码:122 / 125
页数:4
相关论文
共 19 条
  • [11] Different current conduction mechanisms through thin high-k HfxTiySizO films due to the varying Hf to Ti ratio
    Paskaleva, A
    Bauer, AJ
    Lemberger, M
    Zürcher, S
    [J]. JOURNAL OF APPLIED PHYSICS, 2004, 95 (10) : 5583 - 5590
  • [12] Structural and electrical characterization of erbium oxide films grown on Si(100) by low-pressure metalorganic chemical vapor deposition
    Singh, MP
    Thakur, CS
    Shalini, K
    Bhat, N
    Shivashankar, SA
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (14) : 2889 - 2891
  • [13] FUNDAMENTAL CHEMICAL DIFFERENCES AMONG PB DEFECTS ON (111) AND (100) SILICON
    STATHIS, JH
    DORI, L
    [J]. APPLIED PHYSICS LETTERS, 1991, 58 (15) : 1641 - 1643
  • [14] XPS CHARACTERIZATION OF ERBIUM SESQUIOXIDE AND ERBIUM HYDROXIDE
    SWAMI, GTK
    STAGEBERG, FE
    GOLDMAN, AM
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 767 - 770
  • [15] High-κ gate dielectrics:: Current status and materials properties considerations
    Wilk, GD
    Wallace, RM
    Anthony, JM
    [J]. JOURNAL OF APPLIED PHYSICS, 2001, 89 (10) : 5243 - 5275
  • [16] Epitaxial growth of Er2O3 films on Si(001)
    Xu, R
    Zhu, YY
    Chen, S
    Xue, F
    Fan, YL
    Yang, XJ
    Jiang, ZM
    [J]. JOURNAL OF CRYSTAL GROWTH, 2005, 277 (1-4) : 496 - 501
  • [17] Improved conductance method for determining interface trap density of metal-oxide-semiconductor device with high series resistance
    Yang, H
    Son, Y
    Choi, S
    Hwang, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (46-49): : L1460 - L1462
  • [18] Ti gate compatible with atomic-layer-deposited HfO2 for n-type metal-oxide-semiconductor devices -: art. no. 092107
    Yang, HD
    Son, Y
    Baek, S
    Hwang, H
    Lim, H
    Jung, HS
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (09) : 1 - 3
  • [19] Band offsets of Er2O3 films epitaxially grown on Si substrates
    Zhu, YY
    Chen, S
    Xu, R
    Fang, ZB
    Zhao, JF
    Fan, YL
    Yang, XJ
    Jiang, ZM
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (16)