Preparation and characterization of CdxZn1-xS thin films by spray pyrolysis technique for photovoltaic applications

CdxZn(1-x)S (x = 0, 0.2, 0.4, 0.6, 0.8, and 1) thin films were deposited by the chemical spray pyrolysis technique using a less used combination of chemicals. Depositions were done at 573 K on cleaned glass substrates. The composition, surface morphology and structural properties of deposited films were studied using EDAX, SEM and X-ray diffraction technique. XRD Studies reveal that all the films are crystalline with hexagonal (wurtzite) structure and inclusion of Cd into the structure of ZnS improved the crystallinity of the films. In the entire compositions, the (0 0 2) diffraction peak is prominent which gives lattice matching to the chalcogenide semiconductor Such as CuInxGa1-xSe2 and CuIn (s(1-x)Se(x))(2), which are used in photovoltaic devices. The value of lattice constant 'a' and 'c' have been observed to vary with composition from 0.382 to 0.415 nm and 0.625 to 0.675 nm, respectively. The band gap of the thin films varied from 3.32 to 2.41 eV as composition varied from x = 0.0 to 1.0. It was observed that presence of small amount of cadmium results in marked changes in the optical band gap of ZnS. (C) 2009 Elsevier Ltd. All rights reserved.