The abnormal aging phenomena in GaN-based near-ultraviolet laser diodes

被引：2
作者：
Wang, Jin [1 ,2 ]
Feng, Meixin [2 ,3 ]
Zhou, Rui [2 ,4 ]
Sun, Qian [2 ,3 ,4 ]
Liu, Jianxun [2 ]
Huang, Yingnan [2 ]
Zhou, Yu [2 ,3 ]
Gao, Hongwei [2 ,3 ]
Zheng, Xinhe [1 ]
Ikeda, Masao [2 ]
Huang, Rong [5 ]
Li, Fangsen [5 ]
Ding-Sun, An [5 ]
Yang, Hui [2 ,4 ,5 ]
机构：
[1] Univ Sci & Technol Beijing, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China
[3] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nanchang 330200, Jiangxi, Peoples R China
[4] Univ Sci & Technol China, Sch Nano Technol & Nano Bion, Hefei 230026, Anhui, Peoples R China
[5] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Vacuum Interconnected Nanotech Workstn, Suzhou 215123, Peoples R China
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2019年 / 52卷 / 27期
基金：
中国国家自然科学基金; 北京市自然科学基金; 中国博士后科学基金;
关键词：
GaN; laser diodes; near ultraviolet; Mg doping; HIGH-POWER; DEGRADATION;
D O I：
10.1088/1361-6463/ab1990
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An abnormal aging phenomenon is reported for GaN-based near-ultraviolet laser diodes (LDs). Under an electrical stress for several minutes, the threshold current of the LDs decreased, while the light output power and the operation voltage increased. The amplitude of the abnormal aging phenomena was found to be mainly related to the excess Mg concentration in the p-AlGaN electron blocking layer (EBL). It almost disappeared when the Mg concentration in the AlGaN EBL was reduced to 2 x 10(19) cm(-3). We propose that this phenomenon was related to the Mg-V-N-H complex defects formed in highly doped AlGaN EBL ([Mg] > 3 x 10(19) cm(-3)).
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页数：5
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