Influence of the film-electrode interface in thin-film capacitors

Some variations in the dielectric parameters in thin films to those in bulk ceramics have been observed in recent years. An interfacial layer between the ferroelectric film and the electrode is believed to be responsible for this behaviour. A series of Ba0.7Sr0.3TiO3 samples with thicknesses ranging from 30 nm to 370 nm have been deposited on Pt-coated Si-wafers by chemical solution deposition (CSD) method. In this contribution investigations of the interface capacity with respect to a temperature dependence in a temperature range between 20 K and 550 K will be presented. Conclusions are drawn on the influence of the interface capacity on the thickness dependence of the dielectric constant.