Growth of diamond films on crystalline silicon by hot-filament chemical vapor deposition

被引：8
作者：
Baidakova, MV
Vul', AY
Golubev, VG
Grudinkin, SA
Melekhin, VG
Feoktistov, NA
Krüger, A
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 184021, Russia
[2] Toyohashi Univ Technol, Toyohashi, Aichi 4418580, Japan
来源：
SEMICONDUCTORS | 2002年 / 36卷 / 06期
关键词：
D O I：
10.1134/1.1485657
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The effect of hot-filament chemical vapor deposition conditions on the phase composition of diamond films grown on a silicon substrate was studied. The growth conditions providing the highest content of diamond phase at a growth rate of about 1 mum/h were ascertained. (C) 2002 MAIK "Nauka/Interperiodica".
引用
收藏
页码：615 / 620
页数：6
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