Dependence of minority carrier lifetime of Be-doped InAs/InAsSb type-II infrared superlattices on temperature and doping density

被引：7

作者：

Connelly, Blair C. ^{[1
]}

Steenbergen, Elizabeth H. ^{[2
]}

Smith, Howard E. ^{[3
]}

Elhamri, Said ^{[4
]}

Mitchel, William C. ^{[2
]}

Mou, Shin ^{[2
]}

Metcalfe, Grace D. ^{[1
]}

Brown, Gail J. ^{[2
]}

Wraback, Michael ^{[1
]}

机构：

[1] US Army, Res Lab, Sensors & Elect Devices Directorate, Adelphi, MD 20783 USA

[2] US Air Force, Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA

[3] Univ Dayton, Res Inst, Dayton, OH 45469 USA

[4] Univ Dayton, Dept Phys, Dayton, OH 45469 USA

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2016年 / 253卷 / 04期

关键词：

beryllium doping; InAs; minority-carrier lifetime; time-resolved photoluminescence; type-II superlattices;

D O I：

10.1002/pssb.201552497

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We investigate the minority carrier lifetime of Be-doped InAs/InAsSb type-II superlattices as a function of doping density and temperature using time-resolved photoluminescence (TRPL) to determine if switching the superlattice type from the typical n-type residual carrier concentration to p-type may improve device performance by improving the lifetime-mobility product. The introduction of the Be dopant to the superlattice reduces the carrier lifetime, first by a factor of approximate to 3 for doping densities near or below the n-type residual carrier concentration, then by an order of magnitude for samples doped well above the residual carrier concentration. Further, the higher-doped p-type samples demonstrate two distinct TRPL decay regimes and two peaks in the PL spectra, suggesting the formation of an additional acceptor-related recombination pathway leading to the observed shorter carrier lifetime.

引用

页码：630 / 634

页数：5

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