Elaboration and characterization of Co doped, conductive ZnO thin films deposited by radio-frequency magnetron sputtering at room temperature

被引:45
作者
El Mir, L. [1 ]
Ben Ayadi, Z. [1 ]
Rahmouni, H. [1 ]
El Ghoul, J. [1 ]
Djessas, K. [2 ]
von Bardeleben, H. J. [3 ]
机构
[1] Fac Sci Gabes, Lab Phys Mat & Nanomat Appl Environm, Gabes 6072, Tunisia
[2] Univ Perpignan, Lab Math & Phys Syst, F-66860 Perpignan, France
[3] Univ Paris 06, INSP, CNRS, UMR 7588, F-75015 Paris, France
关键词
Nanostructures; Thin films; Sputtering; Zinc oxide; Transparent conductive oxide (TCO); X-ray diffraction; Electrical properties and measurements; Electron paramagnetic resonance spectroscopy; ZINC-OXIDE FILMS; TRANSPARENT; SILICON; AL;
D O I
10.1016/j.tsf.2009.03.197
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nanocrystalline, highly (at.%) Co doped ZnO powder, obtained by a modified sol-gel method, was used as a target material for the growth of pm thin films by radio frequency magnetron sputtering. The films were deposited at room temperature on quartz substrates. The as-deposited films were polycrystalline but highly textured with the c-axis aligned normal to the substrate plane. They present high optical transmittance in the visible range of approximately 90%, a carrier concentration of about 10(20) cm(-3) and electrical resistivity of 10(-3) Omega cm at room temperature. The analysis of the Co2+ spectrum by electron paramagnetic resonance (EPR) showed the Co to be incorporated substitutionally and the angular variation EPR spectrum demonstrates a monocrystal like texturing of the films with the c-axis normal to the film plane. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:6007 / 6011
页数:5
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