Loss Reduction of Si Wire Waveguide Fabricated by Edge-Enhancement Writing for Electron Beam Lithography and Reactive Ion Etching Using Double Layered Resist Mask with C60

被引：17

作者：

Inoue, Keita ^{[1
]}

Plumwongrot, Dhanorm ^{[1
]}

Nishiyama, Nobuhiko ^{[1
]}

Sakamoto, Shinichi ^{[1
]}

Enomoto, Haruki ^{[1
]}

Tamura, Shigeo ^{[2
]}

Maruyama, Takeo ^{[3
]}

Arai, Shigehisa ^{[4
]}

机构：

[1] Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528552, Japan

[2] Tokyo Inst Technol, Tech Dept, Meguro Ku, Tokyo 1528552, Japan

[3] Kanazawa Univ, Sch Elect & Comp Engn, Coll Sci & Engn, Kanazawa, Ishikawa 9201192, Japan

[4] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Meguro Ku, Tokyo 1528552, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 03期

关键词：

NANOCOMPOSITE RESIST; ROUGHNESS;

D O I：

10.1143/JJAP.48.030208

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Loss reduction methods for single-mode photonic wire in silicon-on-insulator were investigated, with a Si core size of 200 x 440 nm(2), fabricated with electron beam lithography and dry etching, using a double layer of electron beam (EB) resist mask. The transverse electric (TE) mode propagation loss measured at a wavelength of 1550 nm was 4.5 dB/cm, which is, to the best of our knowledge, the lowest value ever attained for a Si wire waveguide fabricated by the parallel plate reactive ion etching (RIE) method. (C) 2009 The Japan Society of Applied Physics

引用

页数：3

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