Ruthenium-doped semi-insulating InP-buried InGaAlAs/InAlAs multi-quantum-well modulators

被引：8
|
作者：
Kondo, S [1 ]
Noguchi, Y [1 ]
Tsuzuki, K [1 ]
Yuda, M [1 ]
Oku, S [1 ]
Kondo, Y [1 ]
Takeuchi, H [1 ]
机构：
[1] NTT Corp, Photon Lab, Atsugi, Kanagawa 2430198, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2002年 / 41卷 / 2B期
关键词：
ruthenium; semi-insulating; InP; InGaAlAs; InAlAs; MQW; modulator;
D O I：
10.1143/JJAP.41.1171
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ruthenium(Ru)-doped InP-buried electro-absorption optical modulators a-re demonstrated for the first time. Ru-doped InP-burying semi-insulating layers were grown by conventional metal-organic vapor phase epitaxial growth (MOVPE) with phosC phin. Semi-insulating layers with high resistivities of 10(8)-10(9) Omega.cm were obtained easily and reproducibly. The capacitance and the leakage current of the modulators were reduced significantly because the interdiffusion between the transition metal and zinc decreased.
引用
收藏
页码：1171 / 1174
页数：4
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