Impact of neutron-induced displacement damage on the single event latchup sensitivity of bulk CMOS SRAM

被引：0

作者：

Pan, Xiao-Yu ^{[1
]}

Guo, Hong-Xia ^{[1
]}

Luo, Yin-Hong ^{[1
]}

Zhang, Feng-Qi ^{[1
]}

Ding, Li-Li ^{[1
]}

Wei, Jia-Nan ^{[1
]}

Zhao, Wen ^{[1
]}

机构：

[1] Northwest Inst Nucl Technol, Xian 710024, Peoples R China

来源：

CHINESE PHYSICS B | 2017年 / 26卷 / 01期

关键词：

displacement damage; neutron irradiation; single event latchup; TCAD simulation;

D O I：

10.1088/1674-1056/26/1/018501

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Since the displacement damage induced by the neutron irradiation prior has negligible impact on the performance of the bulk CMOS SRAM, we use the neutron irradiation to degrade the minority carrier lifetime in the regions responsible for latchup. With the experimental results, we discuss the impact of the neutron-induced displacement damage on the SEL sensitivity and qualitative analyze the effectiveness of this suppression approach with TCAD simulation.

引用

页数：5

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