Upper critical field and vortex phase diagram of polycrystalline δ-Mo1-xZrxN thin films by sol-gel

被引：2

作者：

Hui, Zhenzhen ^{[1
]}

Tang, Xianwu ^{[1
]}

Wei, Renhuai ^{[1
]}

Lei, Hechang ^{[2
]}

Gao, Guanyin ^{[3
]}

Hu, Ling ^{[1
]}

Yang, Jie ^{[1
]}

Yang, Zhaorong ^{[1
]}

Song, Wenhai ^{[1
]}

Zhu, Xuebin ^{[1
]}

Sun, Yuping ^{[1
,4
]}

机构：

[1] Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China

[2] Brookhaven Natl Lab, Condensed Matter Phys & Mat Sci Dept, Upton, NY 11973 USA

[3] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China

[4] Chinese Acad Sci, High Field Magnet Lab, Hefei 230031, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 03期

关键词：

CRITICAL-CURRENT-DENSITY; GRAIN-GROWTH; FLUX JUMPS; MON FILMS; DELTA-MON; SUPERCONDUCTIVITY; DEPENDENCE;

D O I：

10.1063/1.4862860

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Upper critical field of polycrystalline delta-Mo1-xZrxN (0 <= x <= 0.3) thin films by sol-gel was investigated. It showed that the upper critical field was continuously improved with Zr doping content, and the improvement of similar to 10 T in upper critical field was mainly attributed to the combined effects of obvious enhancements in normal-state resistivity with slight changes in T-c, obvious decrease in crystallite/grain size and enhanced microstrains. Flux jump was observed in low-level doped thin films due to enhanced critical current density by Zr doping. Finally, the vortex phase diagram of delta-Mo0.95Zr0.05N thin films was presented, which will provide guidance for investigation about the vortex mechanisms of delta-Mo1-xZrxN thin films. (C) 2014 AIP Publishing LLC.

引用

页数：6

共 29 条

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