Upper critical field and vortex phase diagram of polycrystalline δ-Mo1-xZrxN thin films by sol-gel

被引：2
作者：
Hui, Zhenzhen [1 ]
Tang, Xianwu [1 ]
Wei, Renhuai [1 ]
Lei, Hechang [2 ]
Gao, Guanyin [3 ]
Hu, Ling [1 ]
Yang, Jie [1 ]
Yang, Zhaorong [1 ]
Song, Wenhai [1 ]
Zhu, Xuebin [1 ]
Sun, Yuping [1 ,4 ]
机构：
[1] Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
[2] Brookhaven Natl Lab, Condensed Matter Phys & Mat Sci Dept, Upton, NY 11973 USA
[3] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China
[4] Chinese Acad Sci, High Field Magnet Lab, Hefei 230031, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 03期
关键词：
CRITICAL-CURRENT-DENSITY; GRAIN-GROWTH; FLUX JUMPS; MON FILMS; DELTA-MON; SUPERCONDUCTIVITY; DEPENDENCE;
D O I：
10.1063/1.4862860
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Upper critical field of polycrystalline delta-Mo1-xZrxN (0 <= x <= 0.3) thin films by sol-gel was investigated. It showed that the upper critical field was continuously improved with Zr doping content, and the improvement of similar to 10 T in upper critical field was mainly attributed to the combined effects of obvious enhancements in normal-state resistivity with slight changes in T-c, obvious decrease in crystallite/grain size and enhanced microstrains. Flux jump was observed in low-level doped thin films due to enhanced critical current density by Zr doping. Finally, the vortex phase diagram of delta-Mo0.95Zr0.05N thin films was presented, which will provide guidance for investigation about the vortex mechanisms of delta-Mo1-xZrxN thin films. (C) 2014 AIP Publishing LLC.
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页数：6
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