60% PAE, 30W X-band and 33% PAE, 100W Ku-Band PAs utilizing 0.15μm GaN HEMT Technology

被引：0

作者：

Torii, Takuma ^{[1
]}

Imai, Shohei ^{[2
,3
]}

Maehara, Hiroaki ^{[2
,3
]}

Miyashita, Miyo ^{[2
,3
]}

Kunii, Tetsuo ^{[2
,3
]}

Morimoto, Takuo

Inouc, Akira ^{[2
,3
]}

Ohta, Akira ^{[2
,3
]}

Katayama, Hideaki ^{[2
,3
]}

Yunouc, Norihiro

Yamanaka, Koji ^{[1
]}

Fukumoto, Hiroshi ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, Informat Technol R&D Ctr, 5-1-1 Ofuna, Kamakura, Kanagawa 2478501, Japan

[2] Mitsubishi Electr Corp, High Frequency & Opt Device Works, 4-1 Mizuhara, Itami, Hyogo 6648641, Japan

[3] Mitsubishi Electr Corp, Commun Syst Ctr, 8-1-1 Tsukaguchi Honmachi, Atnagasaki, Hyogo 6618661, Japan

来源：

2016 46TH EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2016年

关键词：

power amplifier; GaN-HEMT; Ku-band; X-band; second harmonic reflection circuit;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two kinds of high efficiency power amplifiers (PAs) at X and Ku bands utilizing 0.15 mu m GaN HEMT technology arc presented. The 0.15 mu m GaN HEMT technology with cutoff frequency of over 40 GHz enables them to realize high RF performances at higher frequency. To provide better efficiency of the PAs, the second harmonic reflection circuits are employed at both input and output of GaN HEMT chips. The measured results show the X-band GaN HEMT PA achieved power added efficiency (PAE) of 58.6% and output power (P-out) of 30W, and the Ku-band GaN HEMT PA obtained PAE of 33% and P-out of 100W under CW operation. To the best of our knowledge, the both PAE of the X-band PA and P-out under CW operation of the Ku-band PA are state-of-the-art.

引用

页码：568 / 571

页数：4

共 22 条

[1] Ku-Band AlGaN/GaN-HEMT with over 30% of PAE [J].

Takagi, Kazutaka ;

Takatsuka, Shinji ;

Kashiwabara, Yasushi ;

Teramoto, Shinichiro ;

Matsushita, Keiichi ;

Sakurai, Hiroyuki ;

Onodera, Ken ;

Kawasaki, Hisao ;

Takada, Yoshiharu ;

Tsuda, Kunio .

2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3, 2009, :457-+

[2] A 30W, 46% PAE S-Band GaN HEMT MMIC Power Amplifier for Radar Applications [J].

Jardel, O. ;

Olivier, M. ;

Lancereau, D. ;

Aubry, R. ;

Chartier, E. ;

Sarazin, N. ;

Poisson, M. -A. Di Forte ;

Piotrowicz, S. ;

Stanislawiak, M. ;

Rimbert, D. ;

Delage, S. L. ;

Eudeline, P. .

2012 42ND EUROPEAN MICROWAVE CONFERENCE (EUMC), 2012, :1019-1022

[3] A 30W, 46% PAE S-Band GaN HEMT MMIC Power Amplifier for Radar Applications [J].

Jardel, O. ;

Olivier, M. ;

Lancereau, D. ;

Aubry, R. ;

Chartier, E. ;

Sarazin, N. ;

Poisson, M. -A. Di Forte ;

Piotrowicz, S. ;

Stanislawiak, M. ;

Rimbert, D. ;

Delage, S. L. ;

Eudeline, P. .

2012 7TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2012, :639-642

[4] A 2 W 45 % PAE X-Band GaN HEMT Class-F MMIC Power Amplifier [J].

Senju, Tomohiro ;

Takagi, Kazutaka ;

Kimura, Hideki .

2018 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC), 2018, :956-958

[5] Design, fabrication and characterising of 100 W GaN HEMT for Ku-band application [J].

Ren Chunjiang ;

Zhong Shichang ;

Li Yuchao ;

Li Zhonghui ;

Kong Yuechan ;

Chen Tangsheng .

JOURNAL OF SEMICONDUCTORS, 2016, 37 (08)

[6] C-band 340-W and X-band 100-W GaN Power Amplifiers with Over 50-% PAE [J].

Shigematsu, H. ;

Inoue, Y. ;

Akasegawa, A. ;

Yamada, M. ;

Masuda, S. ;

Kamada, Y. ;

Yamada, A. ;

Kanamura, A. ;

Ohki, T. ;

Makiyama, K. ;

Okamoto, N. ;

Imanishi, K. ;

Kikkawa, T. ;

Joshin, K. ;

Hara, N. .

2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3, 2009, :1265-+

[7] 53% PAE 32W iniaturized X-band. GaN HEMT Power MMICs [J].

Ono, Naoko ;

Senju, Tomohiro ;

Takagi, Kazutaka .

2018 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC), 2018, :557-559

[8] 43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC Amplifiers [J].

Piotrowicz, S. ;

Ouarch, Z. ;

Chartier, E. ;

Aubry, R. ;

Callet, G. ;

Floriot, D. ;

Jacquet, J. C. ;

Jardel, O. ;

Morvan, E. ;

Reveyrand, T. ;

Sarazin, N. ;

Delage, S. L. .

2010 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (MTT), 2010, :505-508

[9] A 0.5W 33%-PAE Ka-band Power Amplifier in 0.15μm GaAs [J].

Liu, Liangliang ;

Zhao, Dixian .

2022 IEEE MTT-S INTERNATIONAL WIRELESS SYMPOSIUM, IWS, 2022,

[10] X-BAND 100 W SOLID-STATE POWER AMPLIFIER USING A 0.25 μM GAN HEMT TECHNOLOGY [J].

Kang, Dong Min ;

Lim, Jong Won ;

Ahn, Ho Kyun ;

Kim, Sung Il ;

Kim, Hae Cheon ;

Yoon, Hyung Sup ;

Kwon, Yong Hwan ;

Nam, Eun Soo .

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2015, 57 (01) :212-216

← 1 2 3 →