Study on the mechanism of platinum-assisted hydrofluoric acid etching of SiC using density functional theory calculations

被引：7

作者：

Bui, P. V. ^{[1
]}

Isohashi, A. ^{[1
]}

Kizaki, H. ^{[1
]}

Sano, Y. ^{[1
]}

Yamauchi, K. ^{[1
,2
]}

Morikawa, Y. ^{[1
,2
]}

Inagaki, K. ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Dept Precis Sci & Technol, Osaka 5650871, Japan

[2] Osaka Univ, Grad Sch Engn, Res Ctr Ultra Precis Sci & Technol, Osaka 5650871, Japan

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 20期

关键词：

DISSOCIATIVE ADSORPTION; HYDROGEN PASSIVATION; FREE PLANARIZATION; SURFACES; CATALYST; HF; 1ST-PRINCIPLES; 6H-SIC(0001); STATE;

D O I：

10.1063/1.4935832

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrofluoric acid (HF) etching of the SiC surface assisted by Pt as a catalyst is investigated using density functional theory. Etching is initiated by the dissociative adsorption of HF on step-edge Si, forming a five-fold coordinated Si moiety as a metastable state. This is followed by breaking of the Si-C back-bond by a H-transfer process. The gross activation barrier strongly correlates with the stability of the metastable state and is reduced by the formation of Pt-O chemical bonds, leading to an enhancement of the etching reaction. (C) 2015 AIP Publishing LLC.

引用

页数：4

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