Subpicosecond time-resolved Raman studies of LO phonons in GaN: Dependence on photoexcited carrier density

被引：93

作者：

Tsen, K. T. ^{[1
]}

Kiang, Juliann G.

Ferry, D. K.

Morkoc, H.

机构：

[1] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA

[2] Walter Reed Army Inst Res, Dept Cellular Injury, Silver Spring, MD 20910 USA

[3] Uniformed Serv Univ Hlth Sci, Dept Med, Bethesda, MD 20814 USA

[4] Uniformed Serv Univ Hlth Sci, Dept Pharmacol, Bethesda, MD 20814 USA

[5] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

[6] Virginia Commonwealth Univ, Dept Phys, Richmond, VA 23284 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 11期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2349315

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Subpicosecond time-resolved Raman spectroscopy has been used to measure the lifetime of the LO phonon mode in GaN for photoexcited electron-hole pair density ranging from 10(16) to 2x10(19) cm(-3). The lifetime has been found to decrease from 2.5 ps, at low density, to 0.35 ps, at the highest density. The experimental findings should help resolve the recent controversy over the lifetime of LO phonon mode in GaN. (c) 2006 American Institute of Physics.

引用

页数：3

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