Epitaxial growth of Mg2Si films on strontium titanate single crystals

被引：8

作者：

Akiyama, Kensuke ^{[1
]}

Katagiri, Atsuo ^{[1
]}

Ogawa, Shota ^{[1
]}

Matsushima, Masaaki ^{[1
]}

Funakubo, Hiroshi ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Innovat & Engn Mat, Midori Ku, Yokohama, Kanagawa 2288505, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 12 | 2013年 / 10卷 / 12期

关键词：

Mg2Si; film; epitaxial growth; strontium titanate; SUBSTRATE;

D O I：

10.1002/pssc.201300332

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

(110)- and (111)-oriented Mg2Si films were grown at 325 degrees C on (100) and (110), and (111) SrTiO3 substrates, respectively, by RF magnetron sputtering method. X-ray pole figure measurement showed that (110)-oriented Mg2Si films on (100) and (110) SrTiO3 substrates were in-plane-aligned epitaxially grown ones. (110)-oriented epitaxial films on (100) SrTiO3 substrates consisted of two types of varians in-plane rotating at an angle of 90 degrees, while epitaxial films on (110) SrTiO3 substrates consisted of single type of domains. On the other hand, (111)oriented Mg2Si films on (111) SrTiO3 substrates were inplane-random one-axis oriented films. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1688 / 1691

页数：4

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