Shubnikov-de Haas oscillations of the conductivity of a two-dimensional gas in quantum wells based on germanium and silicon. Determination of the effective mass and g factor

被引：15

作者：

Berkutov, I. B. ^{[1
]}

Andrievskii, V. V. ^{[1
]}

Komnik, Yu. F. ^{[1
]}

Mironov, O. A. ^{[2
,3
]}

Mironov, M. ^{[4
]}

Leadley, D. R. ^{[5
]}

机构：

[1] Natl Acad Sci Ukraine, BI Verkin Inst Low Temp Phys & Engn, UA-61103 Kharkov, Ukraine

[2] Univ Warwick, Warwick SEMINANO R&D Ctr, Coventry CV4 7EZ, W Midlands, England

[3] Int Lab High Magnet Fields & Low Temp, PL-50985 Wroclaw, Poland

[4] Musashi Inst Technol, Setagaya Ku, Tokyo 158, Japan

[5] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

来源：

LOW TEMPERATURE PHYSICS | 2009年 / 35卷 / 02期

关键词：

D O I：

10.1063/1.3075945

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Shubnikov-de Haas oscillations of the conductivity of a two-dimensional gas of holes in quantum wells consisting of pure germanium and silicon with low germanium content (13%) are analyzed to determine the effective masses and the g factor in these regions. The magnetic-field dependences of the resistivity rho(xx) obtained at temperatures from 33 mK to 4 K in magnetic fields up to I I T are used for the analysis. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3075945]

引用

页码：141 / 145

页数：5

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