Transient enhanced diffusion and defect studies in B implanted Si

被引：0
|
作者：
Liu, J
Krishnamoorthy, V
Jones, KS
Law, ME
Shi, J
Bennett, J
机构：
来源：
ION IMPLANTATION TECHNOLOGY - 96 | 1997年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Si wafers were implanted with 20keV boron ions to a dose of 2 x 10(14) cm(-2). Subsequent anneals were performed in a nitrogen ambient at 650 degrees C to 800 degrees C for various times. The microstructures of the samples were examined using transmission electron microscopy (TEM). {311} defects were the only type of defects observed in all the samples. Transient enhanced diffusion (TED) behavior of boron atoms was studied using secondary ion mass spectrometry (SIMS). The diffusivity enhancement was calculated using FLOOPS simulations. The activation energy for the TED saturation process was determined to be 1.6 eV. Contributions of boron interstitial clusters and {311} defects to TED will be discussed.
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页码：626 / 629
页数：4
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