Transient enhanced diffusion and defect studies in B implanted Si

被引：0
|
作者：
Liu, J
Krishnamoorthy, V
Jones, KS
Law, ME
Shi, J
Bennett, J
机构：
来源：
ION IMPLANTATION TECHNOLOGY - 96 | 1997年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Si wafers were implanted with 20keV boron ions to a dose of 2 x 10(14) cm(-2). Subsequent anneals were performed in a nitrogen ambient at 650 degrees C to 800 degrees C for various times. The microstructures of the samples were examined using transmission electron microscopy (TEM). {311} defects were the only type of defects observed in all the samples. Transient enhanced diffusion (TED) behavior of boron atoms was studied using secondary ion mass spectrometry (SIMS). The diffusivity enhancement was calculated using FLOOPS simulations. The activation energy for the TED saturation process was determined to be 1.6 eV. Contributions of boron interstitial clusters and {311} defects to TED will be discussed.
引用
收藏
页码：626 / 629
页数：4
相关论文
共 50 条
  • [1] Transient enhanced diffusion of phosphorus and defect evolution in P+ implanted Si
    Li, J
    Keys, P
    Chen, J
    Law, ME
    Jones, KS
    Jasper, C
    SI FRONT-END PROCESSING-PHYSICS AND TECHNOLOGY OF DOPANT-DEFECT INTERACTIONS, 1999, 568 : 175 - 180
  • [2] Transient enhanced diffusion of phosphorus and defect evolution in P+ implanted Si
    Dept. of Materials Science and Engineering, University of Florida, SWAMP Center, Gainesville, FL 32611-6400, United States
    不详
    不详
    Mater Res Soc Symp Proc, (175-180):
  • [3] Transient enhanced diffusion of B in Si implanted with decaborane cluster ions
    Sosnowski, M
    Albano, MA
    Li, C
    Gossmann, HJL
    Jacobson, DC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2002, 149 (08) : G474 - G476
  • [4] Transient enhanced diffusion and defect microstructure in high dose, low energy As+ implanted Si
    Krishnamoorthy, V
    Moller, K
    Jones, KS
    Venables, D
    Jackson, J
    Rubin, L
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (11) : 5997 - 6002
  • [5] Dependence of the transient enhanced diffusion, of B in Si, upon B concentration and ion implanted dose
    Solmi, S
    Mannino, G
    Servidori, M
    Bersani, M
    Mancini, L
    Milita, S
    Privitera, V
    Anderle, M
    GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2002, 82-84 : 177 - 182
  • [6] Observation of transient enhanced diffusion in B+-implanted Si by buried boron isotopes
    Chang, Ruey-Dar
    Chiang, Hsiao-Pai
    Liu, Hsien-Wen
    Ho, Li-Wei
    Chiang, Po-Chen
    Tsai, Jung-Ruey
    Lin, Jengping
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (11): : 6136 - 6138
  • [7] Observation of transient enhanced diffusion in B+-implanted Si by buried boron isotopes
    Chang, RD
    Chiang, HP
    Liu, HW
    Ho, LW
    Chiang, PC
    Tsai, JR
    Lin, JP
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (11): : 6136 - 6138
  • [8] Transient enhanced diffusion and deactivation of ion-implanted As in strained Si
    Dilliway, GDM
    Smith, AJ
    Hamilton, JJ
    Benson, J
    Xu, L
    McNally, PJ
    Cooke, G
    Kheyrandish, H
    Cowern, NEB
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2005, 237 (1-2): : 131 - 135
  • [9] Transient enhanced diffusion in BF2+-ion-implanted Si
    Sugita, Y
    Ishikawa, T
    Hirai, T
    Kitahara, M
    Inada, T
    REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, SUPPLEMENT NO 15, MARCH 1997, 1997, : 157 - 160
  • [10] TRANSIENT ENHANCED-DIFFUSION OF ION-IMPLANTED B IN SI DURING RAPID THERMAL ANNEALING
    MIYAKE, M
    AOYAMA, S
    KIUCHI, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C451 - C451
12345