Modification of copper and copper oxide surface states due to isopropyl alcohol treatment toward area-selective processes

被引：4

作者：

Mawaki, Takezo ^{[1
]}

Teramoto, Akinobu ^{[2
]}

Ishii, Katsutoshi ^{[3
]}

Shiba, Yoshinobu ^{[4
]}

Kuroda, Rihito ^{[1
]}

Suwa, Tomoyuki ^{[4
]}

Azumo, Shuji ^{[3
]}

Shimizu, Akira ^{[3
]}

Umezawa, Kota ^{[3
]}

Shirai, Yasuyuki ^{[4
]}

Sugawa, Shigetoshi ^{[4
]}

机构：

[1] Tohoku Univ, Grad Sch Engn, Aoba Ku, 6-6-11 Aza Aoba, Sendai, Miyagi 9808579, Japan

[2] Hiroshima Univ, Res Inst Nanodevice & Bio Syst, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 7398527, Japan

[3] Tokyo Electron Technol Solut Ltd, 650 Mitsuzawa,Hosaka Cho, Yamanashi 4070192, Japan

[4] Tohoku Univ, New Ind Creat Hatchery Ctr, Aoba Ku, 6-6-10 Aza Aoba, Sendai, Miyagi 9808579, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2021年 / 39卷 / 01期

关键词：

ATOMIC LAYER DEPOSITION; OXIDATION; XPS; CU;

D O I：

10.1116/6.0000618

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The reduction of copper oxide by isopropyl alcohol (IPA) gas and its mechanism were investigated toward the selective process of copper (Cu) wiring. Also, the decomposition behavior of IPA gas and surface modification during the IPA treatment on Cu and copper oxide surfaces were studied. Two samples were measured: Cu surface having native oxide film and a metal Cu surface after a hydrogen reduction treatment. The decomposition and reaction behaviors and adsorption characteristics of IPA were investigated using the inline evaluation system equipped with a Cu reactor and Fourier transform infrared spectroscopy. The chemical structures of the Cu and copper oxide surfaces before and after IPA treatment were analyzed by x-ray photoelectron spectroscopy. Based on the experiments, the process condition to induce reduction of copper oxide by IPA gas during the Cu processes temperature range was identified. It was also found that different organic matter derived from IPA was adsorbed on each surface.

引用

页数：10

共 23 条

[1]

Auth C., 2017, IEDM INT EL DEV M SA, V29, P2911

[2] Grain Refinement of Deoxidized Copper [J].

Balart, Maria Jose ;

Patel, Jayesh B. ;

Gao, Feng ;

Fan, Zhongyun .

METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 2016, 47A (10) :4988-5011

[3] Resolving surface chemical states in XPS analysis of first row transition metals, oxides and hydroxides: Sc, Ti, V, Cu and Zn [J].

Biesinger, Mark C. ;

Lau, Leo W. M. ;

Gerson, Andrea R. ;

Smart, Roger St. C. .

APPLIED SURFACE SCIENCE, 2010, 257 (03) :887-898

[4]

Brain R., 2016, IEDM INT EL DEV M SA, V9, P931

[5] Controlled Synthesis of Pd/Pt Core Shell Nanoparticles Using Area-selective Atomic Layer Deposition [J].

Cao, Kun ;

Zhu, Qianqian ;

Shan, Bin ;

Chen, Rong .

SCIENTIFIC REPORTS, 2015, 5

[6] Prevention of Late PJI [J].

Chen, Antonia ;

Haddad, Fares ;

Lachiewicz, Paul ;

Bolognesi, Michael ;

Cortes, Luis E. ;

Franceschini, Massimo ;

Gallo, Jiri ;

Glynn, Aaron ;

Della Valle, Alejandro Gonzalez ;

Gahramanov, Aydin ;

Khatod, Monti ;

Lazarinis, Stergios ;

Lob, Guenther ;

Nana, Arvind ;

Ochsner, Peter ;

Tuncay, Ibrahim ;

Winkler, Tobias ;

Zeng, YiRong .

JOURNAL OF ORTHOPAEDIC RESEARCH, 2014, 32 :S158-S171

[7] Achieving area-selective atomic layer deposition on patterned substrates by selective surface modification [J].

Chen, R ;

Kim, H ;

McIntyre, PC ;

Porter, DW ;

Bent, SF .

APPLIED PHYSICS LETTERS, 2005, 86 (19) :1-3

[8] Chemistry for positive pattern transfer using area-selective atomic layer deposition [J].

Chen, R ;

Bent, SF .

ADVANCED MATERIALS, 2006, 18 (08) :1086-+

[9] Selective Deposition of Dielectrics: Limits and Advantages of Alkanethiol Blocking Agents on Metal-Dielectric Patterns [J].

Hashemi, Fatemeh Sadat Minaye ;

Birchansky, Bradlee R. ;

Bent, Stacey F. .

ACS APPLIED MATERIALS & INTERFACES, 2016, 8 (48) :33264-33272

[10] XPS O 1S BINDING-ENERGIES FOR POLYMERS CONTAINING HYDROXYL, ETHER, KETONE AND ESTER GROUPS [J].

LOPEZ, GP ;

CASTNER, DG ;

RATNER, BD .

SURFACE AND INTERFACE ANALYSIS, 1991, 17 (05) :267-272

← 1 2 3 →