Distribution of dislocations in GaSb and InSb epilayers grown on GaAs (001) vicinal substrates

被引：12

作者：

Li, Meicheng ^{[1
]}

Qiu, Yongxin ^{[1
]}

Liu, Guojun ^{[3
]}

Wang, Yutian ^{[2
]}

Zhang, Baoshun ^{[3
]}

Zhao, Liancheng ^{[1
]}

机构：

[1] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China

[2] CAS, Inst Semicond, Beijing 100000, Peoples R China

[3] Changchun Univ Sci & Technol, Changchun 130022, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 09期

基金：

美国国家科学基金会;

关键词：

X-RAY-DIFFRACTION; MOLECULAR-BEAM-EPITAXY; FILMS; MISFIT;

D O I：

10.1063/1.3115450

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaSb and InSb epilayers grown on GaAs (001) vicinal substrates misoriented toward (111) plane were studied using high resolution x-ray diffraction. The results show that GaSb and InSb epilayers take on positive crystallographic tilt, and the asymmetric distribution of 60 degrees misfit dislocations in {111} glide planes have an effect on the tilt. In addition, the vicinal substrate influences the distribution of the threading dislocations in {111} glide planes, and the density of dislocation in the (111) plane is higher than in the ((1) over bar(1) over bar1) plane. A model was proposed to interpret the distribution of full width at half maximum, which can help us understand the formation and glide process of the dislocations. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3115450]

引用

页数：4

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