Characterization of 4H-SiC-SiO2 Interfaces by a Deep Ultraviolet Spectroscopic Ellipsometer

被引：9

作者：

Seki, H. ^{[1
]}

Wakabayashi, T. ^{[1
]}

Hijikata, Y. ^{[1
]}

Yaguchi, H. ^{[1
]}

Yoshida, S. ^{[1
]}

机构：

[1] Saitama Univ, Div Math Elect & Informat, Sakura Ku, Saitama 3388570, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2008 | 2009年 / 615-617卷

关键词：

4H-SiC; spectroscopic ellipsometry; refractive index; SiC-SiO2; interface; Si emission model; THIN OXIDE REGIME; GROWTH-RATE ENHANCEMENT; OXIDATION; FILMS;

D O I：

10.4028/www.scientific.net/MSF.615-617.505

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have characterized 4H-SiC-oxide interfaces fabricated by thermal oxidation of SiC using spectroscopic ellipsometry in the wide spectral range from visible to deep UV region. It was found that there exists an interface layer, around 1 nm in thickness, regardless of the oxide thickness from 15 nm to 40 nm. The optical constants of the interface layer have similar spectral dependence to those of SiC, though the absolute value of the refractive indices is 0.5-1 larger than that of SiC. We have discussed the structure of the interface layer based oil the oxidation mechanism of SiC, like the Si-emission model.

引用

页码：505 / 508

页数：4

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