Efficiency improvements in AlGaN-based deep ultraviolet light-emitting diodes using inverted-V-shaped graded Al composition electron blocking layer

被引：52
作者：
Fan, Xuancong [1 ]
Sun, Huiqing [1 ]
Li, Xuna [1 ]
Sun, Hao [1 ]
Zhang, Cheng [1 ]
Zhang, Zhuding [1 ]
Guo, Zhiyou [1 ]
机构：
[1] S China Normal Univ, Inst Optoelect Mat & Technol, Lab Nanophoton Funct Mat & Devices, Guangzhou 510631, Guangdong, Peoples R China
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2015年 / 88卷
关键词：
Electron blocking layer; Deep ultraviolet light-emitting diodes; AlGaN; BAND PARAMETERS; PERFORMANCE; HETEROSTRUCTURES; SEMICONDUCTORS; LEDS;
D O I：
10.1016/j.spmi.2015.10.003
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
This paper principally presents the numerical investigation of electron blocking layers (EBL) structures with different Al concentration gradient changing in AlGaN-based deep ultraviolet light emitting diodes (DUV-LEDs). Compared to conventional EBL structure with constant Al composition, the LED with inverted-V-shaped EBL structure has higher output power and carriers recombination rate, but the efficiency droop will decrease obviously while the electron leakage current can reduce much as well. Therefore, the result indicates that appropriate Al component in LED can enhance electron and hole recombination rate in the active region. The improved performance is mainly attribute the sufficient electron-barrier height and relatively higher hole injection efficiency which results from the mitigated band-bending. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码：467 / 473
页数：7
相关论文
共 28 条
[1]   Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructures [J].
Fiorentini, V ;
Bernardini, F ;
Ambacher, O .
APPLIED PHYSICS LETTERS, 2002, 80 (07) :1204-1206
[2]   Numerical study of polarization-doped AlGaN ultraviolet light-emitting diodes [J].
Gao, Lili ;
Xie, Feng ;
Yang, Guofeng .
SUPERLATTICES AND MICROSTRUCTURES, 2014, 71 :1-6
[3]   Quaternary ultraviolet AlInGaN MQW laser diode performance using quaternary AlInGaN electron blocking layer [J].
Ghazai, A. J. ;
Thahab, S. M. ;
Abu Hassan, H. ;
Hassan, Z. .
OPTICS EXPRESS, 2011, 19 (10) :9245-9254
[4]   Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer [J].
Hirayama, Hideki ;
Tsukada, Yusuke ;
Maeda, Tetsutoshi ;
Kamata, Norihiko .
APPLIED PHYSICS EXPRESS, 2010, 3 (03)
[5]   Optimization of the active-layer structure for the deep-UV AlGaN light-emitting diodes [J].
Huang, Man-Fang ;
Lu, Tsung-Hung .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2006, 42 (7-8) :820-826
[6]   Ultraviolet light-emitting diodes based on group three nitrides [J].
Khan, Asif ;
Balakrishnan, Krishnan ;
Katona, Tom .
NATURE PHOTONICS, 2008, 2 (02) :77-84
[7]   Numerical analysis on the effects of bandgap energy and polarization of electron blocking layer in near-ultraviolet light-emitting diodes [J].
Kuo, Yen-Kuang ;
Chen, Yu-Han ;
Chang, Jih-Yuan ;
Tsai, Miao-Chan .
APPLIED PHYSICS LETTERS, 2012, 100 (04)
[8]   Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole injection layer [J].
Li, Hongjian ;
Kang, Junjie ;
Li, Panpan ;
Ma, Jun ;
Wang, Hui ;
Liang, Meng ;
Li, Zhicong ;
Li, Jing ;
Yi, Xiaoyan ;
Wang, Guohong .
APPLIED PHYSICS LETTERS, 2013, 102 (01)
[9]   Advantages of AlGaN-Based 310-nm UV Light-Emitting Diodes With Al Content Graded AlGaN Electron Blocking Layers [J].
Li, Yang ;
Chen, Shengchang ;
Tian, Wu ;
Wu, Zhihao ;
Fang, Yanyan ;
Dai, Jiangnan ;
Chen, Changqing .
IEEE PHOTONICS JOURNAL, 2013, 5 (04)
[10]   Improved Performance of 365-nm LEDs by Inserting an Un-Doped Electron-Blocking Layer [J].
Lin, Wen-Yu ;
Wang, Tzu-Yu ;
Ou, Sin-Liang ;
Liang, Jia-Hao ;
Wuu, Dong-Sing .
IEEE ELECTRON DEVICE LETTERS, 2014, 35 (04) :467-469
123