The Super-Lattice Castellated Field-Effect Transistor: A High-Power, High-Performance RF Amplifier

被引：38

作者：

Chang, Josephine ^{[1
]}

Afroz, Shamima ^{[1
]}

Nagamatsu, Ken ^{[1
]}

Frey, Kevin ^{[1
]}

Saluru, Sarat ^{[1
]}

Merkel, Jordan ^{[2
]}

Taylor, Sara ^{[2
]}

Stewart, Eric ^{[1
]}

Gupta, Shalini ^{[1
]}

Howell, Robert ^{[1
]}

机构：

[1] Northrop Grumman Corp, Linthicum, MD 21240 USA

[2] Rochester Inst Technol, Dept Elect Engn, Rochester, NY 14623 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 07期

关键词：

Gallium compounds; amplifiers; FET amplifiers; microwave amplifiers; microwave power FET amplifiers; microwave FET amplifiers; semiconductor superlattices;

D O I：

10.1109/LED.2019.2917285

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the super-lattice castellated field-effect transistor (SLCFET) device architecture whose unique geometry enables new scaling and optimization strategies for RF power and performance. Measured transistor values show excellent potential for both power and low-noise amplification applications. With I-DS > 1.8 A/mm, f(T) = 47GHz, and f(max) = 124GHz, we are able to demonstrate P-out > 6 W/mm, PAE > 45%, and OIP3/PDC = 6 dB at 30 GHz.

引用

收藏

页码：1048 / 1051

页数：4

相关论文

共 15 条

[1]

[Anonymous], 2016, 2016 IEEE 17 ANN WIR

[2] SUPERLATTICE CONDUCTION IN SUPERLATTICE MODULATION-DOPED FIELD-EFFECT TRANSISTORS [J].

ARCH, DK ;

SHUR, M ;

ABROKWAH, JK ;

DANIELS, RR .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) :1503-1509

[3] Band gaps and built-in electric fields in InAlN/GaN short period superlattices: Comparison with (InAlGa)N quaternary alloys [J].

Gorczyca, I. ;

Suski, T. ;

Christensen, N. E. ;

Svane, A. .

PHYSICAL REVIEW B, 2016, 93 (16)

[4] High conductivity modulation doped AlGaN/GaN multiple channel heterostructures [J].

Heikman, S ;

Keller, S ;

Green, DS ;

DenBaars, SP ;

Mishra, UK .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (08) :5321-5325

[5]

Howell R. S., 2014, IEDM, DOI 10.1109/IEDM.2014.7047033

[6] Advances in the Super-Lattice Castellated Field Effect Transistor (SLCFET) for Wideband Low Loss RF Switching Applications [J].

Howell, Robert S. ;

Stewart, Eric J. ;

Freitag, Ron ;

Parke, Justin ;

Nechay, Bettina ;

King, Matthew ;

Gupta, Shalini ;

Snook, Megan ;

Wathuthanthri, Ishan ;

Ralston, Parrish ;

Henry, H. George .

2016 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2016,

[7]

Inoue K., 2013, PROC IEEE INT C REHA, P1, DOI [10.1109/ICORR.2013.6650436, DOI 10.1109/CSICS.2013.6659235]

[8] A drain-lag model for AlGaN/GaN power HEMTs [J].

Jardel, O. ;

De Groote, F. ;

Charbonniaud, C. ;

Reveyrand, I. ;

Teyssier, J. P. ;

Quere, R. ;

Floriot, D. .

2007 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-6, 2007, :601-604

[9] Nanowire Channel InAlN/GaN HEMTs With High Linearity of gm and fT [J].

Lee, Dong Seup ;

Wang, Han ;

Hsu, Allen ;

Azize, Mohamed ;

Laboutin, Oleg ;

Cao, Yu ;

Johnson, Jerry Wayne ;

Beam, Edward ;

Ketterson, Andrew ;

Schuette, Michael L. ;

Saunier, Paul ;

Palacios, Tomas .

IEEE ELECTRON DEVICE LETTERS, 2013, 34 (08) :969-971

[10] Highly linear A10.3Ga0.7N-A10.05Ga0.95N-GaN composite-channel HEMTs [J].

Liu, J ;

Zhou, YG ;

Chu, RM ;

Cai, Y ;

Chen, KJ ;

Lau, KM .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (03) :145-147