Power high-voltage and fast response Schottky barrier diamond diodes

被引：71

作者：

Blank, V. D. ^{[1
,2
]}

Bormashov, V. S. ^{[1
]}

Tarelkin, S. A. ^{[1
,3
]}

Buga, S. G. ^{[1
,2
]}

Kuznetsov, M. S. ^{[1
]}

Teteruk, D. V. ^{[1
]}

Kornilov, N. V. ^{[1
]}

Terentiev, S. A. ^{[1
]}

Volkov, A. P. ^{[1
]}

机构：

[1] Technol Inst Superhard & Novel Carbon Mat, Moscow 142190, Russia

[2] Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia

[3] Natl Univ Sci & Technol MISiS, Moscow 119049, Russia

来源：

关键词：

Synthetic diamond; Schottky barrier diode; Forward current; Power electronics; Fast switching; Electrical properties; HIGH-TEMPERATURE;

D O I：

10.1016/j.diamond.2015.01.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We developed and investigated a set of packaged vertical diamond Schottky barrier diodes (SBDs) with a large crystal area of up to 25 mm(2). All devices show forward current above 5 A and the blocking voltage over 1000 V in the temperature range from 20 degrees C to 250 degrees C. Due to the large crystal area and finite thermal resistance of the crystal-case interface the forward current self-heating effect results in a good diamond SBDs performance not only at elevated temperatures but also at normal conditions. As a result we measured about 4 V forward voltage drop, 35 m Omega x cm(2) specific on-resistance and 100 nA/cm(2) leakage current for the diode case at room temperature. At a case temperature of 250 degrees C the forward voltage drop was less than 2.5 V, the specific on-resistance about 40 m Omega x cm(2) and the leakage current about 100 mu A/cm(2). The Baliga's figure of merit was 25-30 MW/cm(2) in the temperature range of 20-250 degrees C. The typical value of the reverse recovery time less than 10 ns while switching from 2 A forward current to 100 V blocking voltage meets the requirements for practical use of diamond SBDs in effective switch-mode power converters operating at frequencies higher than 1 MHz. Further device design optimization and the diamond epitaxial layer quality improvement will help to reduce the power losses in on-state and make diamond SBDs competitive with SiC diodes even at room temperature. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：32 / 36

页数：5

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