PEROVSKITE PHYSICS Extremely efficient internal exciton dissociation through edge states in layered 2D perovskites

被引：956

作者：

Blancon, J. -C. ^{[1
]}

Tsai, H. ^{[1
,2
]}

Nie, W. ^{[1
]}

Stoumpos, C. C. ^{[3
]}

Pedesseau, L. ^{[4
]}

Katan, C. ^{[5
]}

Kepenekian, M. ^{[5
]}

Soe, C. M. M. ^{[3
]}

Appavoo, K. ^{[6
]}

Sfeir, M. Y. ^{[6
]}

Tretiak, S. ^{[1
]}

Ajayan, P. M. ^{[2
]}

Kanatzidis, M. G. ^{[3
,7
]}

Even, J. ^{[4
]}

Crochet, J. J. ^{[1
]}

Mohite, A. D. ^{[1
]}

机构：

[1] Los Alamos Natl Lab, Los Alamos, NM 87545 USA

[2] Rice Univ, Dept Mat Sci & Nanoengn, Houston, TX 77005 USA

[3] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA

[4] CNRS, INSA, FOTON, UMR 6082, F-35708 Rennes, France

[5] Univ Rennes 1, CNRS, ISCR, UMR 6226, F-35042 Rennes, France

[6] Ctr Funct Nanomat, Brookhaven Natl Lab, Upton, NY 11973 USA

[7] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

来源：

SCIENCE | 2017年 / 355卷 / 6331期

关键词：

QUANTUM CONFINEMENT; ENERGIES; DYNAMICS;

D O I：

10.1126/science.aal4211

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Understanding and controlling charge and energy flow in state-of-the-art semiconductor quantum wells has enabled high-efficiency optoelectronic devices. Two-dimensional (2D) Ruddlesden-Popper perovskites are solution-processed quantum wells wherein the band gap can be tuned by varying the perovskite-layer thickness, which modulates the effective electron-hole confinement. We report that, counterintuitive to classical quantum-confined systems where photogenerated electrons and holes are strongly bound by Coulomb interactions or excitons, the photophysics of thin films made of Ruddlesden-Popper perovskites with a thickness exceeding two perovskite-crystal units (>1.3 nanometers) is dominated by lower-energy states associated with the local intrinsic electronic structure of the edges of the perovskite layers. These states provide a direct pathway for dissociating excitons into longer-lived free carriers that substantially improve the performance of optoelectronic devices.

引用

页码：1288 / 1291

页数：4

共 33 条

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