Electrical Properties of Dislocations in III-Nitrides

被引：0
作者：
Cavalcoli, D. [1 ]
Minj, A. [1 ]
Pandey, S. [1 ]
Cavallini, A. [1 ]
机构：
[1] Univ Bologna, Dept Phys & Astron, Bologna, Italy
来源：
INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013 | 2014年 / 1583卷
关键词：
AFM; Threading dislocations; III-Nitrides; GAN;
D O I：
10.1063/1.4865657
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Research on GaN, AlN, InN (III-N) and their alloys is achieving new heights due their high potential applications in photonics and electronics. III-N semiconductors are mostly grown epitaxially on sapphire, and due to the large lattice mismatch and the differences in the thermal expansion coefficients, the structures usually contain many threading dislocations (TDs). While their structural properties have been widely investigated, their electrical characteristics and their role in the transport properties of the devices are still debated. In the present contribution we will show conductive AFM studies of TDs in GaN and Al/In GaN ternary alloys to evidence the role of strain, different surface polarity and composition on their electrical properties. Local I-V curves measured at TDs allowed us to clarify their role in the macroscopic electrical properties (leakage current, mobilities) of III-N based devices. Samples obtained by different growers (AIXTRON, III-V Lab) were studied. The comparison between the results obtained in the different alloys allowed us to understand the role of In and Al on the TDs electrical properties.
引用
收藏
页码：301 / 304
页数：4
相关论文
共 11 条
[1]   Indium migration paths in V-defects of InAlN grown by metal-organic vapor phase epitaxy [J].
Kehagias, Th. ;
Dimitrakopulos, G. P. ;
Kioseoglou, J. ;
Kirmse, H. ;
Giesen, C. ;
Heuken, M. ;
Georgakilas, A. ;
Neumann, W. ;
Karakostas, Th. ;
Komninou, Ph. .
APPLIED PHYSICS LETTERS, 2009, 95 (07)
[2]   HIGH DISLOCATION DENSITIES IN HIGH-EFFICIENCY GAN-BASED LIGHT-EMITTING-DIODES [J].
LESTER, SD ;
PONCE, FA ;
CRAFORD, MG ;
STEIGERWALD, DA .
APPLIED PHYSICS LETTERS, 1995, 66 (10) :1249-1251
[3]   Indium segregation in AlInN/AlN/GaN heterostructures [J].
Minj, A. ;
Cavalcoli, D. ;
Cavallini, A. .
APPLIED PHYSICS LETTERS, 2010, 97 (13)
[4]   Nanocrack-induced leakage current in AlInN/AlN/GaN [J].
Minj, Albert ;
Cavalcoli, Daniela ;
Pandey, Saurabh ;
Fraboni, Beatrice ;
Cavallini, Anna ;
Brazzini, Tommaso ;
Calle, Fernando .
SCRIPTA MATERIALIA, 2012, 66 (06) :327-330
[5]   The role of extended defects on the performance of optoelectronic devices in nitride semiconductors [J].
Moustakas, Theodore D. .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2013, 210 (01) :169-174
[6]   Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures [J].
Pandey, S. ;
Cavalcoli, D. ;
Fraboni, B. ;
Cavallini, A. ;
Brazzini, T. ;
Calle, F. .
APPLIED PHYSICS LETTERS, 2012, 100 (15)
[7]   Two-dimensional electron gas properties by current-voltage analyses of Al0.86In0.14N/AlN/GaN heterostructures [J].
Pandey, S. ;
Fraboni, B. ;
Cavalcoli, D. ;
Minj, A. ;
Cavallini, A. .
APPLIED PHYSICS LETTERS, 2011, 99 (01)
[8]   Mobility-limiting mechanisms in polar semiconductor heterostructures [J].
Pandey, Saurabh ;
Cavalcoli, Daniela ;
Minj, Albert ;
Fraboni, Beatrice ;
Cavallini, Anna ;
Skuridina, Daria ;
Vogt, Patrick ;
Kneissl, Michael .
ACTA MATERIALIA, 2012, 60 (6-7) :3176-3180
[9]   Electrostatic energy profiles at nanometer-scale in group III nitride semiconductors using electron holography [J].
Ponce, F. A. .
ANNALEN DER PHYSIK, 2011, 523 (1-2) :75-86
[10]   The role of threading dislocations in the physical properties of GaN and its alloys [J].
Speck, JS ;
Rosner, SJ .
PHYSICA B-CONDENSED MATTER, 1999, 273-4 :24-32
12