Blue light emission of porous silicon subjected to RTP treatments

被引:1
|
作者
Zhao Yi
Yang Deren [1 ]
Lin Lei
Que Duanlin
机构
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
[2] Univ Tokyo, Dept Mat Engn, Tokyo 1138656, Japan
来源
CHINESE SCIENCE BULLETIN | 2006年 / 51卷 / 22期
基金
中国国家自然科学基金;
关键词
porous silicon; blue light emission; rapid thermal process;
D O I
10.1007/s11434-006-2156-3
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Porous silicon samples were treated with the rapid thermal process (RTP) under different circumstances (N-2, Ar, O-2 and Air). Before and after treatments, the samples were checked by means of photoluminescence (PL) spectroscopy and Fourier transform infrared spectroscopy (FTIR). Four blue light emission peaks were found in the PL spectra of porous silicon samples subjected to the RTP treatments at temperatures above 400 degrees C. The peak positions were found not to vary with the circumstances and temperatures of RTP treatments. It is considered that due to oxidation during the RTP treatments, the pole size of Si crystal in porous silicon decreased, resulting in the blue shift of light emission. Correlated with the Si crystal sizes discontinuous hypothesis and previous researchers' theory calculation, the PL peak positions did not vary with the RTP temperature and circumstances.
引用
收藏
页码:2696 / 2699
页数:4
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