Advanced buffers for AlGaN/GaN HEMT and InGaN/GaN MQW on silicon substrates

被引：3

作者：

Dikme, Y. ^{[1
]}

Fieger, M. ^{[1
]}

Eickelkamp, M. ^{[1
]}

Giesen, C. ^{[2
]}

Lutsenko, E. V. ^{[3
]}

Yablonskii, G. P. ^{[3
]}

Szymakowski, A. ^{[1
]}

Jessen, F. O. ^{[1
]}

Vescan, A. ^{[1
]}

Kalisch, H. ^{[1
]}

Heuken, M. ^{[2
,4
]}

Jansen, R. H. ^{[1
]}

机构：

[1] Rhein Westfal TH Aachen, Inst Theoret Elektrotech, Kopernikusstr 16, D-52074 Aachen, Germany

[2] AIXTRON AG, D-52072 Aachen, Germany

[3] Natl Acad Sci Belarus, Stepanov Phys Inst, Minsk 220072, BELARUS

[4] Rhein Westfal TH Aachen, Inst Halbleitertech, D-52056 Aachen, Germany

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 | 2006年 / 3卷 / 06期

关键词：

D O I：

10.1002/pssc.200565263

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

GaN growth was carried out on silicon (Si) substrates by metalorganic vapor phase epitaxy (MOVPE). A layer structure starting with HT (high-temperature) AlN and containing AlGaN and GaN as interlayers was employed for the subsequent deposition of GaN buffer layers. At first, the influence of the in-situ Al pre-deposition at the process start with different durations was investigated. Each time, the pre-deposition was followed by the same layer sequence and with thin AlGaN and GaN grown on top to form a high electron mobility transistor (HEMT). A significant enhancement could be observed in the properties of the investigated samples by reducing the pre-deposition time from 8 s to 2 s. Based on these results, multiple quantum well structures (MQW) and HEMT were grown on these buffers. For the MQW, the well thickness was increased and a shift to higher wavelengths was observed. The HEMT structures have shown enhanced properties by optimizing the growth temperatures of the top AlGaN layer. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2342 / 2345

页数：4

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