Excellent Switching Uniformity of Cu-Doped MoOx/GdOx Bilayer for Nonvolatile Memory Applications

被引：81

作者：

Yoon, Jaesik ^{[1
]}

Choi, Hyejung ^{[1
]}

Lee, Dongsoo ^{[1
]}

Park, Ju-Bong ^{[1
]}

Lee, Joonmyoung ^{[1
]}

Seong, Dong-Jun ^{[1
]}

Ju, Yongkyu ^{[1
]}

Chang, Man ^{[1
]}

Jung, Seungjae ^{[1
]}

Hwang, Hyunsang ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 05期

关键词：

GdOx; bilayer; nonvolatile memory (NVM); resistance random access memory (ReRAM);

D O I：

10.1109/LED.2009.2015687

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated a Cu-doped MoOx/GdOx bilayer film for nonvolatile memory applications. By adopting an ultrathin GdOx layer, we obtained excellent device characteristics such as resistance ratio of three orders of magnitude, uniform distribution of set and reset voltages, switching endurance up to 10(4) cycles, and ten years of data retention at 85 degrees C. By adopting bilayer films of Cu-doped MoOx/GdOx, a local filament was formed by a two-step process. Improved memory characteristics can be explained by the formation of nanoscale local filament in the ultrathin GdOx layer.

引用

页码：457 / 459

页数：3

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