Excellent Switching Uniformity of Cu-Doped MoOx/GdOx Bilayer for Nonvolatile Memory Applications

被引：81

作者：

Yoon, Jaesik ^{[1
]}

Choi, Hyejung ^{[1
]}

Lee, Dongsoo ^{[1
]}

Park, Ju-Bong ^{[1
]}

Lee, Joonmyoung ^{[1
]}

Seong, Dong-Jun ^{[1
]}

Ju, Yongkyu ^{[1
]}

Chang, Man ^{[1
]}

Jung, Seungjae ^{[1
]}

Hwang, Hyunsang ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 05期

关键词：

GdOx; bilayer; nonvolatile memory (NVM); resistance random access memory (ReRAM);

D O I：

10.1109/LED.2009.2015687

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated a Cu-doped MoOx/GdOx bilayer film for nonvolatile memory applications. By adopting an ultrathin GdOx layer, we obtained excellent device characteristics such as resistance ratio of three orders of magnitude, uniform distribution of set and reset voltages, switching endurance up to 10(4) cycles, and ten years of data retention at 85 degrees C. By adopting bilayer films of Cu-doped MoOx/GdOx, a local filament was formed by a two-step process. Improved memory characteristics can be explained by the formation of nanoscale local filament in the ultrathin GdOx layer.

引用

页码：457 / 459

页数：3

共 14 条

[1] A novel resistance memory with high scalability and nanosecond switching [J].

Aratani, K. ;

Ohba, K. ;

Mizuguchi, T. ;

Yasuda, S. ;

Shiimoto, T. ;

Tsushima, T. ;

Sone, T. ;

Endo, K. ;

Kouchiyama, A. ;

Sasaki, S. ;

Maesaka, A. ;

Yamada, N. ;

Narisawa, H. .

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, :783-786

[2] Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses [J].

Baek, IG ;

Lee, MS ;

Seo, S ;

Lee, MJ ;

Seo, DH ;

Suh, DS ;

Park, JC ;

Park, SO ;

Kim, HS ;

Yoo, IK ;

Chung, UI ;

Moon, JT .

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, :587-590

[3] Random circuit breaker network model for unipolar resistance switching [J].

Chae, Seung Chul ;

Lee, Jae Sung ;

Kim, Sejin ;

Lee, Shin Buhm ;

Chang, Seo Hyoung ;

Liu, Chunli ;

Kahng, Byungnam ;

Shin, Hyunjung ;

Kim, Dong-Wook ;

Jung, Chang Uk ;

Seo, Sunae ;

Lee, Myoung-Jae ;

Noh, Tae Won .

ADVANCED MATERIALS, 2008, 20 (06) :1154-+

[4] Nonpolar nonvolatile resistive switching in Cu doped ZrO2 [J].

Guan, Weihua ;

Long, Shibing ;

Liu, Qi ;

Liu, Ming ;

Wang, Wei .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (05) :434-437

[5] Role of oxygen vacancies in Cr-doped SrTiO3 for resistance-change memory [J].

Janousch, Markus ;

Meijer, G. Ingmar ;

Staub, Urs ;

Delley, Bernard ;

Karg, Siegfried F. ;

Andreasson, Bjorn P. .

ADVANCED MATERIALS, 2007, 19 (17) :2232-+

[6] Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications [J].

Lee, D ;

Choi, H ;

Sim, H ;

Choi, D ;

Hwang, H ;

Lee, MJ ;

Seo, SA ;

Yoo, IK .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (10) :719-721

[7]

Lee D.S., 2006, Tech. Dig. - Int. Electron Devices Meet, P797

[8] Resistance switching of copper doped MoOx films for nonvolatile memory applications [J].

Lee, Dongsoo ;

Seong, Dong-jun ;

Jo, Inhwa ;

Xiang, F. ;

Dong, R. ;

Oh, Seokjoon ;

Hwang, Hyunsang .

APPLIED PHYSICS LETTERS, 2007, 90 (12)

[9] Bistable resistive switching of a sputter-deposited Cr-doped SrZrO3 memory film [J].

Liu, CY ;

Wu, PH ;

Wang, A ;

Jang, WY ;

Young, JC ;

Chiu, KY ;

Tseng, TY .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (06) :351-353

[10] Low current resistive switching in Cu-SiO2 cells [J].

Schindler, C. ;

Weides, M. ;

Kozicki, M. N. ;

Waser, R. .

APPLIED PHYSICS LETTERS, 2008, 92 (12)

← 1 2 →