Perpendicular magnetic tunnel junction and its application in magnetic random access memory

被引：23
作者：
Hou-Fang, Liu [1 ]
Ali, Syed Shahbaz [1 ]
Xiu-Feng, Han [1 ]
机构：
[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
来源：
CHINESE PHYSICS B | 2014年 / 23卷 / 07期
基金：
中国国家自然科学基金;
关键词：
magnetic random access memory; perpendicular magnetic anisotropy; spin transfer torque effect; magnetic tunnel junction; MAGNETOCRYSTALLINE ANISOTROPY; ATOMIC LAYERS; MGO; FILMS; MAGNETORESISTANCE; REVERSAL;
D O I：
10.1088/1674-1056/23/7/077501
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy (PMA) are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy (PMA) are introduced. Next, a historical overview of PMA materials as magnetic electrodes, such as the RE-TM alloys TbFeCo and GdFeCo, novel tetragonal manganese alloys Mn-Ga, L1(0)-ordered (Co, Fe)/Pt alloy, multilayer film [Co, Fe, CoFe/Pt, Pd, Ni, Au](N), and ultra-thin magnetic metal/oxidized barrier is offered. The other part of the article focuses on the optimization and fabrication of CoFeB/MgO/CoFeB p-MTJs, which is thought to have high potential to meet the main demands for non-volatile magnetic random access memory.
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页数：9
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