Dopant characterization of fin field-effect transistor structures using scanning capacitance microscopy

被引：10
|
作者：
Khajetoorians, A. A.
Li, J.
Shih, C. K. [1 ]
Wang, X. -D.
Garcia-Gutierrez, D.
Jose-Yacaman, M.
Pham, D.
Celio, H.
Diebold, A.
机构：
[1] Univ Texas, Dept Phys, Austin, TX 78712 USA
[2] APRDL, Freescale Semicond, Tempe, AZ 85284 USA
[3] Univ Texas, Dept Chem Engn, Austin, TX 78712 USA
[4] SEMATECH, Austin, TX 78741 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2007年 / 101卷 / 03期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2434000
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Scanning capacitance microscopy studies of processed fin structures for fin field-effect transistor (FinFET) are presented. We characterized carrier profiling of fins as a function of implantation conditions. The results are confirmed by high angle annular dark field transmission electron microscopy study and qualitatively agree with simulations. The techniques we report can be used in conjunction with implantation and simulation to characterize the dopant profile of FinFET structures and further optimize FinFET processing parameters. (c) 2007 American Institute of Physics.
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页数：5
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