Ultrashort-pulse lasers passively mode locked by quantum-dot-based saturable absorbers

被引：48

作者：

Lagatsky, A. A. ^{[1
]}

Leburn, C. G. ^{[1
]}

Brown, C. T. A. ^{[1
]}

Sibbett, W. ^{[1
]}

Zolotovskaya, S. A. ^{[2
]}

Rafailov, E. U. ^{[2
]}

机构：

[1] Univ St Andrews, Sch Phys & Astron, JF Allen Phys Res Labs, St Andrews KY16 9SS, Fife, Scotland

[2] Univ Dundee, Sch Engn & Phys, Carnegie Lab Phys, Dundee DD1 4HN, Scotland

来源：

PROGRESS IN QUANTUM ELECTRONICS | 2010年 / 34卷 / 01期

基金：

英国工程与自然科学研究理事会;

关键词：

Mode locking; Solid-state lasers; Quantum-dots; NONLINEAR OPTICAL-PROPERTIES; ULTRAFAST CARRIER DYNAMICS; BRAGG REFLECTOR; GLASS-LASER; DIODE-LASER; FORSTERITE LASER; HIGHLY EFFICIENT; SIZE DEPENDENCE; REPETITION-RATE; CONTINUOUS-WAVE;

D O I：

10.1016/j.pquantelec.2009.11.001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Some key recent achievements in the development of novel saturable absorbers that are based on semiconductor quantum-dot (QD) structures for the passive mode locking of near-infrared lasers are outlined. These are group IV-VI semiconductor nanoparticles (quantum dots) in glass matrices and self-assembled semiconductor quantum dots (group III-V) grown on semiconductor mirrors (QD-SESAMs). The performance of solid-state (Yb3+, Nd3+ and Cr4+-based), Yb-doped fibre and monolithically integrated semiconductor lasers has been described within the context of ultrashort-pulse generation using these types of QD-based modulators. Particular attention has been paid to the nonlinear parameters of the QD-based saturable absorbers that determine the quality of the mode locking in such laser systems. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：1 / 45

页数：45

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