Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm

被引：165

作者：

Zhang, JP ^{[1
]}

Chitnis, A ^{[1
]}

Adivarahan, V ^{[1
]}

Wu, S ^{[1
]}

Mandavilli, V ^{[1
]}

Pachipulusu, R ^{[1
]}

Shatalov, M ^{[1
]}

Simin, G ^{[1
]}

Yang, JW ^{[1
]}

Khan, MA ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 26期

关键词：

D O I：

10.1063/1.1531835

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on AlGaN multiple-quantum-well (MQW)-based deep ultraviolet light-emitting diodes over sapphire with peak emission at 278 nm. A new buffer layer growth process was used to reduce the number of defects and hence the nonradiative recombination. The improved material quality and carrier confinement resulted in pulsed powers as high as 3 mW at 278 nm and a significantly reduced deep-level-assisted long-wavelength emission. (C) 2002 American Institute of Physics.

引用

页码：4910 / 4912

页数：3

共 50 条

[1] Milliwatt power AlGaN quantum well deep ultraviolet light emitting diodes
Chitnis, A
Adivarahan, V
Zhang, JP
Shatalov, M
Wu, S
Yang, J
Simin, G
Khan, MA
Hu, X
Fareed, Q
Gaska, R
Shur, MS
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 200 (01): : 99 - 101
[2] Milliwatt power deep ultraviolet light emitting diodes grown on silicon carbide
Moe, CG
Masui, H
Schmidt, MC
Shen, LK
Moran, B
Newman, S
Vampola, K
Mates, T
Keller, S
Speck, JS
DenBaars, SP
Hussel, C
Emerson, D
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (16-19): : L502 - L504
[3] High-efficiency 269 nm emission deep ultraviolet light-emitting diodes
Adivarahan, V
Wu, S
Zhang, JP
Chitnis, A
Shatalov, M
Mandavilli, V
Gaska, R
Khan, MA
APPLIED PHYSICS LETTERS, 2004, 84 (23) : 4762 - 4764
[4] Optical power degradation mechanisms in AlGaN-based 280 nm deep ultraviolet light-emitting diodes on sapphire
Gong, Z
Gaevski, M
Adivarahan, V
Sun, W
Shatalov, M
Khan, MA
APPLIED PHYSICS LETTERS, 2006, 88 (12)
[5] Comparison of ultraviolet light-emitting diodes with peak emission at 340 nm grown on GaN substrate and sapphire
Yasan, A
McClintock, R
Mayes, K
Darvish, SR
Zhang, H
Kung, P
Razeghi, M
Lee, SK
Han, JY
APPLIED PHYSICS LETTERS, 2002, 81 (12) : 2151 - 2153
[6] Deep ultraviolet light-emitting diodes
Hu, X.
Deng, J.
Zhang, J. P.
Lunev, A.
Bilenko, Y.
Katona, T.
Shur, M. S.
Gaska, R.
Shatalov, M.
Khan, A.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (07): : 1815 - 1818
[7] Deep ultraviolet light emitting diodes with emission below 300 nm
Khan, M. Asif
GAN, AIN, INN AND RELATED MATERIALS, 2006, 892 : 3 - 12
[8] Milliwatt-Power AlGaN Deep-UV Light-Emitting Diodes at 254 nm Emission as a Clean Alternative to Mercury Deep-UV Lamps
Khan, Muhammad Ajmal
Maeda, Noritoshi
Itokazu, Yuri
Jo, Masafumi
Iimura, Kazuki
Hirayama, Hideki
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2023, 220 (01):
[9] Micro-pixel design milliwatt power 254 nm emission light emitting diodes
Wu, S
Adivarahan, V
Shatalov, M
Chitnis, A
Sun, WH
Khan, MA
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (8A): : L1035 - L1037
[10] Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm
Yasan, A
McClintock, R
Mayes, K
Darvish, SR
Kung, P
Razeghi, M
APPLIED PHYSICS LETTERS, 2002, 81 (05) : 801 - 802

← 1 2 3 4 5 →