Tungsten added Sb80Te20 for phase-change RAM

被引：10

作者：

Kao, Kin-Fu ^{[1
]}

Cheng, Huai-Yu

Jong, Chao-An

Lan, Chi-Jui

Chin, Tsung-Shune

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

[2] Ind Technol Res Inst, Chutung 31040, Taiwan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2007年 / 43卷 / 02期

关键词：

crystallization temperature; electrical resistivity; phase-change memory; reset current; tungsten doped Sb-Te;

D O I：

10.1109/TMAG.2006.888517

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sb-80 Te-20 has the merit of high crystallization speed yet with low crystallization temperature (T-infinity similar to 132 degrees C), and hence, not suitable for use as a medium of phase change random access memory (PCRAM). We proposed to add refractory metals to solve this problem. It was found that W-added Sb80Te20 show increased T-infinity up to 233 degrees C with increasing W. More important, the melting temperature of W-Sb-Te materials, 536-539 degrees C irrespective of W content, is more than 80 degrees C lower than that of Ge2Sb2Te5. They show a two to four orders of magnitude lowering in resistance during phase change from an amorphous to a crystalline state. With these promising properties, the composition Sb-80 Te-17 W-3 is recommended as a potential candidate for PCRAM.

引用

页码：930 / 932

页数：3

共 7 条

[1] Phase change random access memory cell with superlattice-like structure [J].

Chong, TC ;

Shi, LP ;

Zhao, R ;

Tan, PK ;

Li, JM ;

Lee, HK ;

Miao, XS ;

Du, AY ;

Tung, CH .

APPLIED PHYSICS LETTERS, 2006, 88 (12)

[2]

LAI S, 2001, IEDM, P803

[3] Performances of phase-change recording disks based on GaSbTe media [J].

Lee, CM ;

Yen, WS ;

Chen, JP ;

Chin, TS .

IEEE TRANSACTIONS ON MAGNETICS, 2005, 41 (02) :1022-1024

[4] Temperature dependence of phase-change random access memory cell [J].

Miao, X. S. ;

Shi, L. P. ;

Lee, H. K. ;

Li, J. M. ;

Zhao, R. ;

Tan, P. K. ;

Lim, K. G. ;

Yang, H. X. ;

Chong, T. C. .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (5A) :3955-3958

[5] REVERSIBLE ELECTRICAL SWITCHING PHENOMENA IN DISORDERED STRUCTURES [J].

OVSHINSKY, SR .

PHYSICAL REVIEW LETTERS, 1968, 21 (20) :1450-+

[6] SiO2 incorporation effects in Ge2Sb2Te5 films prepared by magnetron sputtering for phase change random access memory devices [J].

Ryu, Seung Wook ;

Oh, Jin Ho ;

Choi, Byung Joon ;

Hwang, Sung-Yeon ;

Hong, Suk Kyoung ;

Hwang, Cheol Seong ;

Kim, Hyeong Joon .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2006, 9 (08) :G259-G261

[7] Sb-Se-based phase-change memory device with lower power and higher speed operations [J].

Yoon, Sung-Min ;

Lee, Nam-Yeal ;

Ryu, Sang-Ouk ;

Choi, Kyu-Jeong ;

Park, Young-Sam ;

Lee, Seung-Yun ;

Yu, Byoung-Gon ;

Kang, Myung-Jin ;

Choi, Se-Young ;

Wuttig, Matthis .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (06) :445-447

← 1 →