Abnormal Dual Channel Formation Induced by Hydrogen Diffusion From SiNx Interlayer Dielectric in Top Gate a-InGaZnO Transistors

被引：24

作者：

Chen, Guan-Fu ^{[1
]}

Chang, Ting-Chang ^{[2
,3
]}

Chen, Hua-Mao ^{[4
]}

Chen, Bo-Wei ^{[5
]}

Chen, Hong-Chih ^{[6
]}

Li, Cheng-Ya ^{[5
]}

Tai, Ya-Hsiang ^{[4
]}

Hung, Yu-Ju ^{[5
]}

Chang, Kuo-Jui ^{[7
]}

Cheng, Kai-Chung ^{[7
]}

Huang, Chen-Shuo ^{[7
]}

Chen, Kuo-Kuang ^{[7
]}

Lu, Hsueh-Hsing ^{[7
]}

Lin, Yu-Hsin ^{[7
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[3] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 700, Taiwan

[4] Natl Chiao Tung Univ, Dept Photon, Inst Electroopt Engn, Hsinchu 300, Taiwan

[5] Natl Sun Yat Sen Univ, Dept Photon, Kaohsiung 80424, Taiwan

[6] Natl Cheng Kung Univ, Dept Photon, Tainan 70101, Taiwan

[7] AU Optron Corp, New Display Proc Res Div, Hsinchu 30078, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 03期

关键词：

Top gate TFTs; indium gallium zinc oxide (IGZO); dual channel; hump; THIN-FILM TRANSISTORS; AMORPHOUS OXIDE SEMICONDUCTORS; DEGRADATION BEHAVIOR; ZN-O;

D O I：

10.1109/LED.2017.2657546

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter investigates effects of different channel dimensions in top-gate a-InGaZnO4 thin-film transistors with SiNx interlayer dielectric. In narrow channel devices, hydrogen atoms in the SiNx layer diffuse into the entire active layer, inducing a single channel. However, in wider channel devices, the diffusion distance for hydrogen atoms is insufficient to affect the whole channel, instead inducing a double channel. In addition, under hot carrier stress, narrow and wide channels exhibit different degradation behaviors, with simulations showing a strong electrical field at IGZO near the drain terminal of the main channel, which is unaffected by hydrogen.

引用

页码：334 / 337

页数：4

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