Optimum Ge profile design for base transit time minimization of SiGe HBT

被引：0
作者：
Chang, ST [1 ]
Liu, CW [1 ]
Lin, CH [1 ]
机构：
[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan
来源：
APMC 2001: ASIA-PACIFIC MICROWAVE CONFERENCE, VOLS 1-3, PROCEEDINGS | 2001年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A analytical equation of the base transit time including the effects of minority carrier recombination lifetime and velocity saturation for Si/SiGe HBT's with different Ge profiles has been derived. The reduction of recombination lifetime in the neutral base region due to the heavy base doping can shorten the base transit time, while the finite saturation velocity degrades the base transit time, as compared to infinite saturation velocity. The optimum design of Ge profiles in the base to minimize the base transit time can be obtained by the analytical model.
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页码：244 / 247
页数：2
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