Ce3+ luminescent centres in atomic layer epitaxy SrS thin film electroluminescent devices

被引：10

作者：

Benalloul, P

Barthou, C

Benoit, J

Garcia, A

Fouassier, C

Soininen, E

机构：

[1] Univ Paris 06, CNRS, Lab Opt Solides, UMR 7601, F-75252 Paris, France

[2] CNRS, Inst Chim Mat Condensee Bordeaux, F-33608 Pessac, France

[3] Planar Syst Inc, FIN-02201 Espoo, Finland

来源：

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 2000年 / 9卷 / 01期

关键词：

D O I：

10.1051/epjap:2000194

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A luminescent study under selective photonic excitation has established the presence of three different kinds of Ce3+ centres in SrS atomic layer epitaxy thin films: one in a regular sulfur octahedral sites and two others in lower symmetry. These last sites shift the emission spectra towards the green. High thermal annealing up to 750 degrees C improves the crystallinity of the SrS:Ce layer by converting low symmetry Ce3+ sites in regular octahedral sites and decreasing the density of defects. These two effects lead to efficient PL layers with a good blue chromaticity.

引用

页码：19 / 24

页数：6

共 18 条

[1]

BARTHOU C, 1998, 9 INT WORKSH IN ORG, P211

[2]

Huttl B., 1993, ADV MATER OPT ELECTR, V3, P131

[3] Improved blue luminescence in Ag-codoped SrS:Ce thin films made by atomic layer epitaxy and ion implantation [J].