Low temperature metallic state induced by electrostatic carrier doping of SrTiO3

被引：59
作者：
Nakamura, H. [1 ]
Takagi, H.
Inoue, I. H.
Takahashi, Y.
Hasegawa, T.
Tokura, Y.
机构：
[1] Natl Inst Adv Ind Sci & Technol AIST, Correlated Electron Res Ctr, Tsukuba, Ibaraki 3058562, Japan
[2] Univ Tokyo, Dept Adv Mat, Kashiwa, Chiba 2778581, Japan
[3] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 13期
关键词：
D O I：
10.1063/1.2357850
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Transport properties of SrTiO3-channel field-effect transistors with parylene organic gate insulator have been investigated. By applying gate voltage, the sheet resistance falls below R-square similar to 10 k Omega at low temperatures, with carrier mobility exceeding 1000 cm(2)/V s. The temperature dependence of the sheet resistance taken under constant gate voltage exhibits metallic behavior (dR/dT > 0). Results demonstrate an insulator to metal transition in SrTiO3 driven by electrostatic carrier density control. (c) 2006 American Institute of Physics.
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页数：3
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