Resistive Random Access Memory: A Review of Device Challenges

被引：74

作者：

Gupta, Varshita ^{[1
]}

Kapur, Shagun ^{[1
]}

Saurabh, Sneh ^{[1
]}

Grover, Anuj ^{[1
]}

机构：

[1] IIIT, Dept ECE, Delhi 110020, India

来源：

IETE TECHNICAL REVIEW | 2020年 / 37卷 / 04期

关键词：

RRAM; Conducting filament; Materials; Variations; Scalability; Resistive switching; SWITCHING CHARACTERISTICS; CONDUCTING FILAMENTS; RRAM DEVICES; RESISTANCE; VOLTAGE; 1T1R; MECHANISMS; UNIFORMITY; ENDURANCE; BIPOLAR;

D O I：

10.1080/02564602.2019.1629341

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

With scaling, existing charge-based memory technologies exhibit limitations due to charge leaking away easily in a smaller device. Therefore, non-charge based memory technologies such as Resistive Random Access Memory (RRAM) become promising for future applications. RRAM is not only more scalable, but is typically faster and consumes less power than the existing memory technologies. However, RRAM suffers from higher impact of variations and reliability issues. In this review paper, we explain the basic aspects of RRAMs, highlight their advantages and elucidate challenges involved in replacing the existing memory technologies with RRAMs.

引用

页码：377 / 390

页数：14

共 93 条

[1] 1D Selection Device Using Carbon Nanotube FETs for High-Density Cross-Point Memory Arrays [J].

Ahn, Chiyui ;

Jiang, Zizhen ;

Lee, Chi-Shuen ;

Chen, Hong-Yu ;

Liang, Jiale ;

Liyanage, Luckshitha S. ;

Wong, H. -S. Philip .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (07) :2197-2204

[2]

[Anonymous], 2017, INT ROADMAP DEVICES

[3] Magnetoresistive Random Access Memory [J].

Apalkov, Dmytro ;

Dieny, Bernard ;

Slaughter, J. M. .

PROCEEDINGS OF THE IEEE, 2016, 104 (10) :1796-1830

[4] Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses [J].

Baek, IG ;

Lee, MS ;

Seo, S ;

Lee, MJ ;

Seo, DH ;

Suh, DS ;

Park, JC ;

Park, SO ;

Kim, HS ;

Yoo, IK ;

Chung, UI ;

Moon, JT .

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, :587-590

[5] Novel digital nonvolatile memory devices based on semiconducting polymer thin films [J].

Baek, Sungsik ;

Lee, Dongjin ;

Kim, Jiyoun ;

Hong, Sang-Hyun ;

Kim, Ohyun ;

Ree, Moonhor .

ADVANCED FUNCTIONAL MATERIALS, 2007, 17 (15) :2637-2644

[6] Recent Progress in Phase-Change Memory Technology [J].

Burr, Geoffrey W. ;

Brightsky, Matthew J. ;

Sebastian, Abu ;

Cheng, Huai-Yu ;

Wu, Jau-Yi ;

Kim, Sangbum ;

Sosa, Norma E. ;

Papandreou, Nikolaos ;

Lung, Hsiang-Lan ;

Pozidis, Haralampos ;

Eleftheriou, Evangelos ;

Lam, Chung H. .

IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS, 2016, 6 (02) :146-162

[7]

Butcher B, 2012, IEEE INT MEM WORKSH

[8]

Cagli C, 2017, INT CONF ULTI INTEGR, P31, DOI 10.1109/ULIS.2017.7962593

[9] Resistance random access memory [J].

Chang, Ting-Chang ;

Chang, Kuan-Chang ;

Tsai, Tsung-Ming ;

Chu, Tian-Jian ;

Sze, Simon M. .

MATERIALS TODAY, 2016, 19 (05) :254-264

[10] Resistive switching behavior of a thin amorphous rare-earth scandate: Effects of oxygen content [J].

Chang, W. Z. ;

Chu, J. P. ;

Wang, S. F. .

APPLIED PHYSICS LETTERS, 2012, 101 (01)

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