Defects and phase distribution in epitaxial ZnMnSe layers analyzed by transmission electron microscopy

被引:9
作者
Litvinov, D.
Gerthsen, D.
Daniel, B.
Klingshirn, C.
Hetterich, M.
机构
[1] Univ Karlsruhe, Lab Elektronenmikroskopie, D-76128 Karlsruhe, Germany
[2] Univ Karlsruhe, CFN, D-76128 Karlsruhe, Germany
[3] Univ Karlsruhe, Inst Angew Phys, D-76128 Karlsruhe, Germany
关键词
D O I
10.1063/1.2218493
中图分类号
O59 [应用物理学];
学科分类号
摘要
Our work is concerned with the occurrence and distribution of the sphalerite, wurtzite, and rocksalt phases, which can be present in the ZnMnSe system, and the analysis of structural defects. For this purpose, ZnMnSe layers with thicknesses between 700 and 1000 nm and Mn concentrations of 0%, 4%, 11%, 14%, 17%, 29%, 31%, 43%, 50%, 70%, 85%, and 100% were deposited by molecular-beam epitaxy on GaAs (001) substrates. The structure analyses were performed by transmission electron microscopy. A high density of stacking faults exceeding 10(9) cm(-2) is already present for a Mn concentration of 14% suggesting that lower Mn concentrations should be used for spin-aligning layers. A significant volume fraction of twinned regions is contained in the Zn0.69Mn0.31Se layer. ZnMnSe layers with Mn concentrations of 43%, 50%, and less than 30% consist exclusively of the sphalerite phase. The sphalerite and a small volume fraction of the wurtzite phase are contained in the sample with 31% of manganese. A mixture of the sphalerite, wurtzite, and rocksalt phases is observed for Mn concentrations of 70% and 85%. The presence of the wurtzite phase is correlated with regions, which contain particularly high densities of stacking faults. Only the rocksalt and the sphalerite phases remain for pure MnSe.
引用
收藏
页数:8
相关论文
共 30 条
  • [1] Plastic deformation, extended stacking faults and deformation twinning in single crystalline indium phosphide .2. S doped InP
    Azzaz, M
    Michel, JP
    George, A
    [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1996, 73 (03): : 601 - 624
  • [2] CHOI IH, 2004, J VAC SCI TECHNOL A, V22, P1908
  • [3] Local interface composition and native stacking fault density in ZnSe/GaAs(001) heterostructures
    Colli, A
    Carlino, E
    Pelucchi, E
    Grillo, V
    Franciosi, A
    [J]. JOURNAL OF APPLIED PHYSICS, 2004, 96 (05) : 2592 - 2602
  • [4] Carrier concentration, mobility, and electron effective mass in chlorine-doped n-type Zn1-xMnxSe epilayers grown by molecular-beam epitaxy -: art. no. 212103
    Daniel, B
    Agarwal, KC
    Lupaca-Schomber, J
    Klingshirn, C
    Hetterich, M
    [J]. APPLIED PHYSICS LETTERS, 2005, 87 (21) : 1 - 3
  • [5] NUMERICAL-SIMULATION OF ANTIFERROMAGNETIC SPIN-PAIRING EFFECTS IN DILUTED MAGNETIC SEMICONDUCTORS AND ENHANCED PARAMAGNETISM AT INTERFACES
    FATAH, JM
    PIOREK, T
    HARRISON, P
    STIRNER, T
    HAGSTON, WE
    [J]. PHYSICAL REVIEW B, 1994, 49 (15): : 10341 - 10344
  • [6] Injection and detection of a spin-polarized current in a light-emitting diode
    Fiederling, R
    Keim, M
    Reuscher, G
    Ossau, W
    Schmidt, G
    Waag, A
    Molenkamp, LW
    [J]. NATURE, 1999, 402 (6763) : 787 - 790
  • [7] GIRIAT W, 1988, DILUTED MAGNETIC SEM, V25
  • [8] STACKING-FAULT ENERGY AND IONICITY OF CUBIC-III-V COMPOUNDS
    GOTTSCHALK, H
    PATZER, G
    ALEXANDER, H
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 45 (01): : 207 - 217
  • [9] OPTICAL STUDY OF OCTAHEDRALLY AND TETRAHEDRALLY COORDINATED MNSE
    HEIMBRODT, W
    GOEDE, O
    TSCHENTSCHER, I
    WEINHOLD, V
    KLIMAKOW, A
    POHL, U
    JACOBS, K
    HOFFMANN, N
    [J]. PHYSICA B, 1993, 185 (1-4): : 357 - 361
  • [10] Lattice parameter and elastic constants of cubic Zn1-xMnxSe epilayers grown by molecular-beam epitaxy
    Hetterich, M
    Daniel, B
    Klingshirn, C
    Pfundstein, P
    Litvinov, A
    Gerthsen, D
    Eichhorn, K
    Spemann, D
    [J]. 11TH INTERNATIONAL CONFERENCE ON II-VI COMPOUNDS (II-VI 2003), PROCEEDINGS, 2004, 1 (04): : 649 - 652