Sheath expansion in a drifting, nonuniform plasma

被引:7
作者
Keidar, M [1 ]
Brown, IG [1 ]
机构
[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 06期
关键词
D O I
10.1116/1.591040
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A model is proposed for the sheath expansion into a nonuniform plasma with substantial drift velocity. We refer in particular to the streaming metal plasma produced by a vacuum are discharge; this kind of plasma is characterized by its spatial nonuniformity and high ion drift velocity. It is shown that for a nonuniform plasma and high substrate bias voltage (>10 kV), the sheath thickness is significantly smaller than in a uniform plasma. High drift velocity also leads to a decrease in sheath thickness. For plasma immersion ion implantation carried out in a nonuniform plasma, the increase in ion implantation current with increasing voltage is different from that of a uniform plasma where the ion current is constant with voltage. This effect was found to be quantitative agreement with experiment. The decrease in sheath thickness with increasing plasma drift velocity can explain qualitatively the experimentally observed existence of a stable high-voltage sheath for a relatively long time. (C) 1999 American Vacuum Society. [S0734-211X(99)01106-3].
引用
收藏
页码:2648 / 2650
页数:3
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