Black titanium oxynitride thin films prepared by nitrogen plasma-assisted pulsed laser deposition for flat-panel displays
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作者:
Yamaguchi, Mina
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Tohoku Univ, Grad Sch Engn, Dept Mat Sci, Sendai, Miyagi 9808579, JapanTohoku Univ, Grad Sch Engn, Dept Mat Sci, Sendai, Miyagi 9808579, Japan
Yamaguchi, Mina
[1
]
Ishii, Akihiro
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Tohoku Univ, Grad Sch Engn, Dept Mat Sci, Sendai, Miyagi 9808579, Japan
Clemson Univ, Dept Mat Sci & Engn, Clemson, SC 29634 USATohoku Univ, Grad Sch Engn, Dept Mat Sci, Sendai, Miyagi 9808579, Japan
Ishii, Akihiro
[1
,2
]
Oikawa, Itaru
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Tohoku Univ, Grad Sch Engn, Dept Mat Sci, Sendai, Miyagi 9808579, JapanTohoku Univ, Grad Sch Engn, Dept Mat Sci, Sendai, Miyagi 9808579, Japan
Oikawa, Itaru
[1
]
Takamura, Hitoshi
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Tohoku Univ, Grad Sch Engn, Dept Mat Sci, Sendai, Miyagi 9808579, JapanTohoku Univ, Grad Sch Engn, Dept Mat Sci, Sendai, Miyagi 9808579, Japan
Takamura, Hitoshi
[1
]
机构:
[1] Tohoku Univ, Grad Sch Engn, Dept Mat Sci, Sendai, Miyagi 9808579, Japan
[2] Clemson Univ, Dept Mat Sci & Engn, Clemson, SC 29634 USA
Preference for a classy black turn-off appearance and for distinct dark colors on flat-panel displays has led to a high demand for optically black materials. Titanium oxynitrides and tungsten-doped oxynitrides were prepared using nitrogen plasma assisted pulsed laser deposition, and their optical absorption properties were investigated. A selection of Ti-O-N films were prepared with different compositions by controlling the emission current (I-e) and discharge voltage (V-d) of the ion source. It was found that the nitrogen content of the Ti(0,N), could be adjusted by controlling the I-e. The large, flat absorption coefficient of approximately 40 mu m(-1) in the visible range (400-700 nm) attained for the samples deposited at high Vd was attributed to tungsten doping from a W filament in the ion source. The 4.1 mol%W-doped Ti(O,N)(x), which had a rock-salt-type structure, was optically jet-black. The origin of the flat wavelength dispersion in the W-doped Ti(O,N), was attributed to the coexistence of semiconducting absorption and metallic absorption mechanisms. DFT calculations suggest that the 5d states achieved when using doped tungsten provide high absorption in the mid-wavelength range, whereas undoped-Ti (O,N), was characterized by weak absorption.
机构:
Univ Hong Kong, Dept Elect & Elect Engn, Pokfulam Rd, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Elect & Elect Engn, Pokfulam Rd, Hong Kong, Peoples R China
Djurisic, AB
Li, EH
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Univ Hong Kong, Dept Elect & Elect Engn, Pokfulam Rd, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Elect & Elect Engn, Pokfulam Rd, Hong Kong, Peoples R China
机构:
Univ Hong Kong, Dept Elect & Elect Engn, Pokfulam Rd, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Elect & Elect Engn, Pokfulam Rd, Hong Kong, Peoples R China
Djurisic, AB
Li, EH
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Univ Hong Kong, Dept Elect & Elect Engn, Pokfulam Rd, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Elect & Elect Engn, Pokfulam Rd, Hong Kong, Peoples R China