Experiments to determine the mean depth scale of positrons in silicon: Slow positron beam measurements on MBE-grown silicon layers on silicon oxide

被引：8

作者：

Gebauer, J ^{[1
]}

Eichler, S ^{[1
]}

KrauseRehberg, R ^{[1
]}

Zeindl, HP ^{[1
]}

机构：

[1] INST SEMICOND PHYS,D-15230 FRANKFURT,GERMANY

来源：

APPLIED SURFACE SCIENCE | 1997年 / 116卷

关键词：

positron implantation profile; positron mean depth; amorphous silicon; IMPLANTATION PROFILES; MULTILAYER SYSTEMS; SI; SIO2-SI;

D O I：

10.1016/S0169-4332(96)01063-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Molecular beam deposited silicon layers of different thicknesses on thermally grown SiO2, were studied using a slow positron beam. The layer thickness was determined by scanning electron microscopy cross-section images. Positron data were modelled by means of VEPFIT with subsequently changed mean depth parameters A and n. The results were compared with the known layer thickness. It was found that a reasonable fit can be obtained only from a small set of parameters. This corresponds to a positron mean depth scale in silicon like (z) over bar = [2.75(0.25) mu g cm(-2) keV(-1.7))/rho]E-1.7(0.05). These results are in good agreement with recent Monte-Carlo calculations.

引用

页码：247 / 250

页数：4

共 14 条

[1] CHARACTERIZATION OF DEFECTS IN SI AND SIO2-SI USING POSITRONS [J].