Hydrous-plasma treatment of Pt electrodes for atomic layer deposition of ultrathin high-k oxide films

被引：13

作者：

Chang, Che-Hao ^{[1
]}

Chiou, Yan-Kai ^{[1
]}

Hsu, Chia-Wang ^{[1
]}

Wu, Tai-Bor ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2007年 / 10卷 / 03期

关键词：

D O I：

10.1149/1.2426411

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Ultrathin Al2O3 and HfO2 uniform films of similar to 7.3 nm thick were successfully grown by atomic layer deposition (ALD) on Pt electrodes in situ treated with hydrous plasma. X-ray photoelectron spectroscopy reveals that the Pt surface can be effectively modified to Pt(OH)(2) by the hydrous-plasma treatment. It improves the growth of the oxide films and reduces the leakage in the Al2O3 and HfO2 capacitors. The enhancement of hydrolysis reaction and chemisorption reactivity of the metal precursors on the hydroxylated surface of Pt is responsible for improvements in the growth and electrical properties of the ALD films. (c) 2007 The Electrochemical Society.

引用

页码：G5 / G7

页数：3

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