Polaron Localization at Interfaces in High-Mobility Microcrystalline Conjugated Polymers

被引：95

作者：

Zhao, N. ^{[1
]}

Noh, Y. -Y. ^{[1
]}

Chang, J. -F. ^{[1
]}

Heeney, M. ^{[2
]}

McCulloch, I. ^{[3
]}

Sirringhaus, H. ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[2] Univ London, Dept Mat, London E1 4NS, England

[3] Univ London Imperial Coll Sci Technol & Med, Dept Chem, Elect Mat Sect, London SW7 2AZ, England

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 37期

基金：

英国工程与自然科学研究理事会;

关键词：

FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; CHARGE-TRANSPORT; CARRIER MOBILITY; DIELECTRICS;

D O I：

10.1002/adma.200900326

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The charge-induced optical absorptions of two-dimensional polarons in semicrystalline, high-mobility conjugated polymers are investigated as a function of distance from an interface with polymer gate dielectrics of different dielectric constants. For high-k dielectrics, polarons in the accumulation layer at the interface are found to be more localized than those in the bulk.

引用

页码：3759 / 3763

页数：5

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