Ferroelectric properties of bismuth titanate niobate Bi7Ti4NbO21 thin film

被引：16

作者：

Kim, CJ ^{[1
]}

Hong, SG

机构：

[1] Samsung Adv Inst Technol, Microelect Lab, Suwon, South Korea

[2] Samsung Adv Inst Technol, Analyt Engn Lab, Suwon, South Korea

来源：

THIN SOLID FILMS | 2000年 / 365卷 / 01期

关键词：

bismuth titanate niobate Bi7Ti4NbO21; thin film; ferroelectric; sol-gel;

D O I：

10.1016/S0040-6090(00)00654-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The ferroelectric properties of the bismuth titanate niobate Bi7Ti4NbO21 thin film have been studied. The Bi7Ti4NbO21 thin film was successfully fabricated on platinized Si substrates by chemical solution deposition method. The crystallization of bismuth titanate niobate thin film was observed using an X-ray diffraction analysis (XRD). The hysteresis loop was observed a standardized ferroelectric test system. The thin him exhibits ferroelectric hysteresis with remnant polarization P-r = 5.65 mu C/cm(2) and coercive field E-c = 127 kV/cm. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：58 / 60

页数：3

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[4]

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