Nanocrystalline Diamond Integration with III-Nitride HEMTs

被引：41

作者：

Anderson, T. J. ^{[1
]}

Hobart, K. D. ^{[1
]}

Tadjer, M. J. ^{[1
]}

Koehler, A. D. ^{[1
]}

Imhoff, E. A. ^{[1
]}

Hite, J. K. ^{[1
]}

Feygelson, T. I. ^{[1
]}

Pate, B. B. ^{[1
]}

Eddy, C. R., Jr. ^{[1
]}

Kub, F. J. ^{[1
]}

机构：

[1] US Naval Res Lab, Washington, DC 20375 USA

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2017年 / 6卷 / 02期

关键词：

ELECTRON-MOBILITY TRANSISTORS; ALGAN/GAN; NANODIAMOND; FILMS;

D O I：

10.1149/2.0071702jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Reduced performance in Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) as a result of self-heating has been well-documented. To mitigate this effect, the incorporation of high thermal conductivity diamond heat spreading films or substrates has been proposed. A mid-process integration scheme, termed "gate-after-diamond," is shown to improve the thermal budget for NCD deposition and enables scalable, large-area diamond coating without degrading the Schottky gate metal. The optimization of this process step is presented in this work. Nanocrystalline (NCD)-capped devices had a 20% lower channel temperature at equivalent power dissipation. Improved electrical characteristics were also observed, notably improved on-resistance and breakdown voltage, and reduced gate leakage. (C) 2016 The Electrochemical Society. All rights reserved.

引用

页码：Q3036 / Q3039

页数：4

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