Switching and synaptic characteristics of AZO/ZnO/ITO valence change memory device

被引：3

作者：

Simanjuntak, F. M. ^{[1
,2
]}

Chandrasekaran, S. ^{[3
]}

Gapsari, F. ^{[4
]}

Tseng, T. Y. ^{[5
,6
]}

机构：

[1] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan

[3] Natl Chiao Tung Univ, Dept Elect Engn & Comp Sci, Hsinchu 30010, Taiwan

[4] Brawijaya Univ, Dept Mech Engn, Malang 65145, Indonesia

[5] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

[6] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan

来源：

INTERNATIONAL CONFERENCE ON MECHANICAL ENGINEERING RESEARCH AND APPLICATION | 2019年 / 494卷

关键词：

D O I：

10.1088/1757-899X/494/1/012027

中图分类号：

TH [机械、仪表工业];

学科分类号：

0802 ;

摘要：

This paper reports the resistive switching and synaptic capability of AZO/ZnO/ITO transparent and flexiblevalence change memory device structure. The device performs stable endurance for more than 50 cycles with sufficient ON/OFF ratio of one order of magnitude; no intermediate state (data error) is observed during the cycle-to-cycle test. By exploiting the analog switching characteristic of the device and employing identical pulses to the top electrode, a synaptic behavior can be achieved. A low programming voltage of 1.5V is used to modulate the conductance during potentiation and depression which indicate that the device is a logic-compatible. The conduction mechanism during the switching processand the device performance is discussed.

引用

页数：7

共 22 条

[1] One bipolar transistor selector - One resistive random access memory device for cross bar memory array [J].

Aluguri, R. ;

Kumar, D. ;

Simanjuntak, F. M. ;

Tseng, T. Y. .

AIP ADVANCES, 2017, 7 (09)

[2]

[Anonymous], 2014, SCI REP-UK, DOI DOI 10.1038/SREP07186

[3] The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random access memory devices [J].

Chandrasekaran, Sridhar ;

Simanjuntak, Firman Mangasa ;

Aluguri, Rakesh ;

Tseng, Tseung-Yuen .

THIN SOLID FILMS, 2018, 660 :777-781

[4] Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layer [J].

Chandrasekaran, Sridhar ;

Simanjuntak, Firman Mangasa ;

Tseng, Tseung-Yuen .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (04)

[5] Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory [J].

Chandrasekaran, Sridhar ;

Simanjuntak, Firman Mangasa ;

Tsai, Tsung-Ling ;

Lin, Chun-An ;

Tseng, Tseung-Yuen .

APPLIED PHYSICS LETTERS, 2017, 111 (11)

[6]

CHIU FC, 2014, ADV MATER SCI ENG, DOI DOI 10.1155/2014/578168

[7] All Solution-Processed, Fully Transparent Resistive Memory Devices [J].

Kim, Areum ;

Song, Keunkyu ;

Kim, Youngwoo ;

Moon, Jooho .

ACS APPLIED MATERIALS & INTERFACES, 2011, 3 (11) :4525-4530

[8] Hydrothermally grown ZnO nanostructures on few-layer graphene sheets [J].

Kim, Yong-Jin ;

Hadiyawarman ;

Yoon, Aram ;

Kim, Miyoung ;

Yi, Gyu-Chul ;

Liu, Chunli .

NANOTECHNOLOGY, 2011, 22 (24)

[9] Structural and electrical properties analysis of InAlGaN/GaN heterostructures grown at elevated temperatures by MOCVD [J].

Lumbantoruan, Franky ;

Zheng, Xia-Xi ;

Huang, Jian-Hao ;

Huang, Ren-Yao ;

Mangasa, Firman ;

Chang, Edward-Yi ;

Tu, Yung-Yi ;

Lee, Ching-Ting .

JOURNAL OF CRYSTAL GROWTH, 2018, 501 :7-12

[10] Temperature induced complementary switching in titanium oxide resistive random access memory [J].

Panda, D. ;

Simanjuntak, F. M. ;

Tseng, T. -Y. .

AIP ADVANCES, 2016, 6 (07)

← 1 2 3 →